用二硅烷和三甲基硅烷前驱体RP-CVD生长高碳Si1−xCx涂层

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874653

M. Myronov, S. Rhead, G. Colston, D. Leadley

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引用次数: 2

摘要

我们已经证明了用RP-CVD和使用二硅烷和三甲基硅烷前体生长Si1-xCx涂层。获得了非常高的含碳量，可达2.4%。它接近于使用更昂贵的前体获得的最佳结果。从工业角度来看，RP-CVD的使用至关重要，因为尽管MBE对生长参数提供了更好的控制，RP-CVD是唯一可行的大规模外延生长方法之一。

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RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors

We have demonstrated Si1-xCx epilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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