Resonant photoluminescence from Ge microdisks on Ge-on-insulator

Xuejun Xu, K. Nishida, K. Sawano, T. Maruizumi, Y. Shiraki
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引用次数: 6

Abstract

Well-resolved resonant PL peaks were observed from microdisks fabricated on heavily n-doped GOI. FSR and Q-factor confirmed that these peaks corresponded to the WGMs of microdisk. Q-factors didn't decrease against pump power, indicating the onset of population inversion. Our results show that GOI is a promising platform to realize lasers.
绝缘体上锗微盘的共振光致发光
在重n掺杂的GOI上制备的微盘上观察到高分辨的谐振PL峰。FSR和q因子证实了这些峰对应于微盘的wgm。q因子并没有随着泵功率的增加而降低,说明种群反转已经开始。我们的研究结果表明,GOI是一个很有前途的实现激光器的平台。
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