x射线技术在新型晶体管结构开发和生产中的应用

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874676

A. Hikavyy, E. Rosseel, L. Witters, H. Mertens, P. Ryan, R. Langer, R. Loo

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引用次数: 0

摘要

在工艺开发和集成的不同阶段，x射线技术是表征应变层不可缺少的工具。即使在某些情况下无法获得精确的信息，与其他技术相结合，它也能提供快速而重要的反馈。

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Use of X-ray techniques in the development and production of novel transistor structures

X-ray techniques are indispensable tools for characterization of strained layers during different stages of process development and integration. Even when precise information cannot be obtained in some cases, in combination with other techniques it gives a fast and important feedback.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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