Qian Zhou, Chunlei Zhan, X. Gong, T. Chan, T. Osipowicz, Sin Leng Lim, E. Tok, Y. Yeo
{"title":"Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy","authors":"Qian Zhou, Chunlei Zhan, X. Gong, T. Chan, T. Osipowicz, Sin Leng Lim, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874665","DOIUrl":null,"url":null,"abstract":"For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.