Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy

Qian Zhou, Chunlei Zhan, X. Gong, T. Chan, T. Osipowicz, Sin Leng Lim, E. Tok, Y. Yeo
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Abstract

For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.
脉冲激光诱导外延制备了含0.3%替代铅的锗铅合金
首次采用溅射和激光诱导外延法制备了GePb单晶。制备的GePb合金结晶质量良好,无Pb析出和聚类。在GePb与Ge的界面处未观察到位错。HRBS数据表明,取代Pb含量为~0.3%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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