{"title":"锗锡的氯基和氟基干法蚀刻","authors":"Yuan Dong, D. Lei, Xinran Xu, Wei Wang, Y. Yeo","doi":"10.1109/ISTDM.2014.6874686","DOIUrl":null,"url":null,"abstract":"Cl- and F- based dry etching of Ge<sub>1-x</sub>Sn<sub>x</sub> were presented in this work. High selectivity of Ge<sub>1-x</sub>Sn<sub>x</sub> over Ge can be achieved by F-based dry etching. This is caused by the formation of a thin nonvolatile SnF<sub>x</sub> layer at Ge<sub>1-x</sub>Sn<sub>x</sub> surface. Addition of O<sub>2</sub> to CF<sub>4</sub> can enhance the selectivity of F-based dry etching, but with an increase of surface roughness of Ge<sub>1-x</sub>Sn<sub>x</sub> samples.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Chlorine- and Fluorine-based dry etching of Germanium-Tin\",\"authors\":\"Yuan Dong, D. Lei, Xinran Xu, Wei Wang, Y. Yeo\",\"doi\":\"10.1109/ISTDM.2014.6874686\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cl- and F- based dry etching of Ge<sub>1-x</sub>Sn<sub>x</sub> were presented in this work. High selectivity of Ge<sub>1-x</sub>Sn<sub>x</sub> over Ge can be achieved by F-based dry etching. This is caused by the formation of a thin nonvolatile SnF<sub>x</sub> layer at Ge<sub>1-x</sub>Sn<sub>x</sub> surface. Addition of O<sub>2</sub> to CF<sub>4</sub> can enhance the selectivity of F-based dry etching, but with an increase of surface roughness of Ge<sub>1-x</sub>Sn<sub>x</sub> samples.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874686\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Chlorine- and Fluorine-based dry etching of Germanium-Tin
Cl- and F- based dry etching of Ge1-xSnx were presented in this work. High selectivity of Ge1-xSnx over Ge can be achieved by F-based dry etching. This is caused by the formation of a thin nonvolatile SnFx layer at Ge1-xSnx surface. Addition of O2 to CF4 can enhance the selectivity of F-based dry etching, but with an increase of surface roughness of Ge1-xSnx samples.
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