直流溅射条件对溅射外延法在Si衬底上形成Ge层的影响

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874675

T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda

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摘要

用溅射外延法在电阻率为3.5 Ω cm的Si(001)衬底上制备了Ge层。通过调整直流溅射条件，在Si衬底上获得了平坦的Ge层。高直流功率溅射改变了表面形貌，导致扁平Ge层的形成。

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Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method

The formation of Ge layers on the Si (001) substrates with 3.5 Ω cm resistivity by sputter epitaxy method has been investigated. Flat Ge layers on the Si substrates are obtained by adjusting the DC sputtering conditions. High DC power sputtering modifies the surface morphology and leads to the formation of flat Ge layers.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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