{"title":"金属硅化物上低温生长的Ge1−xSnx层","authors":"M. Kawano, S. Yamada, M. Miyao, K. Hamaya","doi":"10.1109/ISTDM.2014.6874632","DOIUrl":null,"url":null,"abstract":"We have demonstrated epitaxial growth of Ge<sub>1-x</sub>Sn<sub>x</sub> layers on Fe<sub>3</sub>Si by low-temperature MBE. We believe that this technique can be applicable to the growth of Ge<sub>1-x</sub>Sn<sub>x</sub> on various ferromagnetic metallic templates toward high-performance spin-based MOSFETs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-temperature Grown Ge1−xSnx layers on a metallic silicide\",\"authors\":\"M. Kawano, S. Yamada, M. Miyao, K. Hamaya\",\"doi\":\"10.1109/ISTDM.2014.6874632\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated epitaxial growth of Ge<sub>1-x</sub>Sn<sub>x</sub> layers on Fe<sub>3</sub>Si by low-temperature MBE. We believe that this technique can be applicable to the growth of Ge<sub>1-x</sub>Sn<sub>x</sub> on various ferromagnetic metallic templates toward high-performance spin-based MOSFETs.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874632\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-temperature Grown Ge1−xSnx layers on a metallic silicide
We have demonstrated epitaxial growth of Ge1-xSnx layers on Fe3Si by low-temperature MBE. We believe that this technique can be applicable to the growth of Ge1-xSnx on various ferromagnetic metallic templates toward high-performance spin-based MOSFETs.
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