锗激光器用于近红外和中红外

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874659

J. Michel, Yan Cai, Zhaohong Han, Lin Zhang, Wei Yu, L. Kimerling

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引用次数: 0

摘要

Ge激光器，单片集成在硅CMOS平台上，为未来的片上光子系统提供了巨大的潜力。此外，宽增益谱开启了在近红外和中红外廉价可调谐激光器的可能性。

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Germanium lasers for the near and mid IR

Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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