Micro and Nano Engineering最新文献_第4页

Optical force measurement method by a nanomechanical resonant device with electrostatic force coupling 采用纳米机械谐振装置与静电力耦合的光学力测量方法

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 DOI: 10.1016/j.mne.2025.100341

Kazuki Bessho, Shin'ichi Warisawa, Reo Kometani

{"title":"Optical force measurement method by a nanomechanical resonant device with electrostatic force coupling","authors":"Kazuki Bessho, Shin'ichi Warisawa, Reo Kometani","doi":"10.1016/j.mne.2025.100341","DOIUrl":"10.1016/j.mne.2025.100341","url":null,"abstract":"<div><div>In this study, a highly sensitive method for measuring optical forces using a nanomechanical resonant device is proposed. This device features a nanomechanical resonator electrostatically coupled to a cantilever using an applied voltage. When an optical force bends the cantilever, the electrostatic force between the cantilever and the resonator changes, enabling the measurement of the optical force by observing the corresponding shift in the resonator's resonance frequency. By structurally separating the cantilever that receives the optical force from the resonator whose vibration is measured, this device effectively reduces the influence of photothermal effects and enables highly sensitive optical force measurement even with a continuous laser. A laser was used to apply an optical force to the cantilever, and the resulting change in the resonator's resonance frequency due to the optical force was measured under various electrostatic force conditions. The experimental results achieved a best calculated optical force measurement resolution of 0.15 fN, even at room temperature and atmospheric pressure. This study suggests the existence of an optimal electrostatic force for optical force measurement, indicating the potential to achieve even higher sensitivity with the same device. Furthermore, this device-based method is expected to become a key technique for the direct measurement of optical forces.</div></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"29 ","pages":"Article 100341"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145690790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Direct fabrication of micropatterned PDMS nanofilms using maskless UV lithography 利用无掩模紫外光刻直接制备微图像化PDMS纳米膜

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-10-30 DOI: 10.1016/j.mne.2025.100329

Hajime Okamoto , Riku Takahashi , Azusa Oshima , Satoshi Sasaki

引用次数: 0

Effect of microlens arrays on light extraction efficiency in red and green quantum-dot light-emitting diodes 微透镜阵列对红、绿量子点发光二极管光提取效率的影响

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-10-10 DOI: 10.1016/j.mne.2025.100325

Suhyun Park , Soobin Sim , Hyeonjun Lee , Hak June Lee , Jeong Woo Park , Jin Su Park , Wan Ki Bae , Hyunkoo Lee

{"title":"Effect of microlens arrays on light extraction efficiency in red and green quantum-dot light-emitting diodes","authors":"Suhyun Park , Soobin Sim , Hyeonjun Lee , Hak June Lee , Jeong Woo Park , Jin Su Park , Wan Ki Bae , Hyunkoo Lee","doi":"10.1016/j.mne.2025.100325","DOIUrl":"10.1016/j.mne.2025.100325","url":null,"abstract":"<div><div>The efficiency of quantum-dot light-emitting diodes (QLEDs) was improved by utilizing a microlens array (MLA) film, and the effect of the MLA film was investigated through optical simulation. The MLA films enhanced luminance by 1.51 and 1.28 times at 5 V for green and red QLEDs, respectively. The green and red QLEDs exhibited high external quantum efficiencies of 14.69 % and 19.87 %, and efficiency enhancement ratios were approximately 56.97 % and 21.68 %, respectively. Furthermore, the electroluminescence spectra remained stable, ensuring color consistency. By altering the dipole orientation of the emitter in the optical simulation, we observed that as the dipole became more vertical, the efficiency improved due to increased light extraction by the MLA. In addition, varying the number of microlens array by changing the microlens radius in the same emission area resulted in a consistent enhancement ratio, while increasing the MLA density significantly improved light extraction. These results suggest that MLA films effectively enhance the efficiency of QLEDs with color stability, providing a strategy for improving their performance.</div></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"29 ","pages":"Article 100325"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145321722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Side-wall metallization process for enhanced electrical contact in SOI-based MEMS switches 基于soi的MEMS开关中增强电接触的侧壁金属化工艺

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-11-17 DOI: 10.1016/j.mne.2025.100338

Inês S. Garcia , Filipa C. Mota , Jorge M. Pereira , Fahimullah Khan , Carlos Ferreira , Jorge Cabral , José Fernandes , Carlos Calaza , Rosana A. Dias , Filipe S. Alves

{"title":"Side-wall metallization process for enhanced electrical contact in SOI-based MEMS switches","authors":"Inês S. Garcia , Filipa C. Mota , Jorge M. Pereira , Fahimullah Khan , Carlos Ferreira , Jorge Cabral , José Fernandes , Carlos Calaza , Rosana A. Dias , Filipe S. Alves","doi":"10.1016/j.mne.2025.100338","DOIUrl":"10.1016/j.mne.2025.100338","url":null,"abstract":"<div><div>MEMS inertial switches provide a zero-power alternative to conventional accelerometers by mechanically closing an electrical contact only when a specific acceleration threshold is exceeded. However, conventional SOI-based MEMS switches suffer from high silicon-to‑silicon contact resistance, which degrades signal reliability and limits device performance. This work presents a novel fabrication process that enables selective metal coating of contact side-wall in SOI-based MEMS inertial switches, aiming to reduce contact resistance while maintaining compatibility with standard MEMS bulk micromachining process flows. The proposed method introduces a pre-release metallization sequence combining deep reactive ion etching (DRIE), EKC-based cleaning, directional sputtering of an aluminum alloy, and a photosensitive polyimide (PI) masking process, followed by chemical mechanical planarization (CMP). This integration eliminates the need for post-release processing or dry-film resists and ensures alignment with SOI process constraints. Optical and scanning electron microscopy (SEM) inspection confirmed proper pattern transfer, trench formation, and planarization, while energy-dispersive X-ray spectroscopy (EDX) analysis revealed partial side-wall metal coverage, predominantly on upper regions due to shadowing effects induced by DRIE scalloping. Electrical measurements demonstrated a reduction in contact resistance from over 3 kΩ to 200 Ω in metallized areas. Although out-of-plane misalignment between electrodes (≈250 nm) limited reliable Al<img>Al contact formation, the demonstrated process provides a scalable approach to create low-resistance contacts in bulk-micromachined MEMS switches and establishes a foundation for future optimization through thicker or alternative metal depositions.</div></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"29 ","pages":"Article 100338"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145575917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of cavity shape on thermal accelerometer parameters 空腔形状对热加速度计参数的影响

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-11-13 DOI: 10.1016/j.mne.2025.100331

Toulmé Valentin , Ben Salk Soukaina , Faucher Marc , Combette Philippe , Giani Alain

引用次数: 0

Review of plasma etching processes for III-V semiconductors III-V型半导体等离子体刻蚀工艺研究进展

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-11-11 DOI: 10.1016/j.mne.2025.100330

Alison Clarke , Maxime Darnon , Karin Hinzer , Mathieu de Lafontaine

{"title":"Review of plasma etching processes for III-V semiconductors","authors":"Alison Clarke , Maxime Darnon , Karin Hinzer , Mathieu de Lafontaine","doi":"10.1016/j.mne.2025.100330","DOIUrl":"10.1016/j.mne.2025.100330","url":null,"abstract":"<div><div>This paper provides a comprehensive literature review and analysis of III-V semiconductor plasma etching, highlighting key etching considerations and providing literature references to inform future process development. Plasma etching processes for III-V materials such as gallium arsenide (GaAs), indium phosphide (InP), and gallium nitride (GaN) are essential to fabricate many photonic and optoelectronic devices. Such applications frequently require etches with high anisotropy, selectivity and aspect ratio while maintaining minimal roughness and lateral etching. Ten plasma etching techniques used for III-V materials as well as the impact of plasma process parameters on etch results are reviewed. Main etching challenges include aluminum oxidation, non-volatile indium etch subproducts when <span><math><mo><</mo></math></span>150 °C, and strong III-N bonds. Exhaustive reference tables are generated to report capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) etching process parameters for the main binary, ternary, and quaternary III-V semiconductors. An analysis of binary III-V etching is presented in a summative reference plot, which highlights trends in etch rate, etch technology, and active gas chemistry. Among studies reporting etch rates, gallium arsenide was etched most frequently, with ICP being the dominant etch technique. Multilayer systems and plasma damage are briefly discussed, with post-etch treatments and hydrogen plasmas being used for damage passivation. Overall, III-V materials can be etched with plasma up to several <span><math><mi>μ</mi></math></span>m/min, with most processes using chlorine-based chemistries such as Cl<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, BCl<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>, and SiCl<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>.</div></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"29 ","pages":"Article 100330"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145575914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The comparison of NH3 and N2O plasma treatments on PZT Lead zirconate titanate sensing membranes applied in biosensor NH3和N2O等离子体处理在PZT锆钛酸铅传感膜上的应用比较

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-11-15 DOI: 10.1016/j.mne.2025.100334

Ming Ling Lee, Sung Hao Li

{"title":"The comparison of NH3 and N2O plasma treatments on PZT Lead zirconate titanate sensing membranes applied in biosensor","authors":"Ming Ling Lee, Sung Hao Li","doi":"10.1016/j.mne.2025.100334","DOIUrl":"10.1016/j.mne.2025.100334","url":null,"abstract":"<div><div>This study conducted a comparative analysis of NH3 and N<sub>2</sub>O plasma treatments on PZT (lead zirconate titanate, Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>) sensing membranes integrated within the EIS (Electrolyte-Insulator-Semiconductor) structure. PZT sensing membranes subjected to NH<sub>3</sub> and N<sub>2</sub>O plasma treatments were examined using multiple material analysis techniques, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The PZT sensing membrane treated with N<sub>2</sub>O plasma for 1 min exhibited the highest sensitivity, superior linearity, lowest hysteresis voltage, and minimal drift rate compared to the other N<sub>2</sub>O plasma conditions. Likewise, the PZT sensing membrane treated with NH<sub>3</sub> plasma for 6 min demonstrated the highest sensitivity, optimal linearity, excellent H<sup>+</sup> selectivity, lowest hysteresis voltage, and least drift rate among the various plasma conditions. Additionally, we investigated the biomedical sensing characteristics of PZT sensing membranes in urea, creatinine, and glucose solutions. Measurements revealed that PZT sensing membranes exhibited optimal sensing characteristics for urea, creatinine, and glucose when subjected to a 6-min exposure to ammonia plasma. Notably, the sensing membrane demonstrated the best sensitivity and linearity for glucose, with values of 15.5 mV/mM and 98.49 %, respectively. These results highlight that the PZT sensing membrane, following plasma treatment within the EIS structure, is well-suited for applications in biomedical devices.</div></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"29 ","pages":"Article 100334"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145575915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of annealing effects on the deformation of Ti/Au multi-layered micro-cantilevers 退火对Ti/Au多层微悬臂梁变形的影响

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-11-09 DOI: 10.1016/j.mne.2025.100333

Ryosuke Miyai , Tomoyuki Kurioka , Chun-Yi Chen , Tso-Fu Mark Chang , Katsuyuki Machida , Hiroyuki Ito , Yoshihiro Miyake , Masato Sone

引用次数: 0

Scalability analysis for transmon-based quantum computers 基于transmon的量子计算机的可扩展性分析

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-10-13 DOI: 10.1016/j.mne.2025.100327

Shi-Li Zhang

引用次数: 0

3D-printed piezoelectrically-actuated self-sensing cantilever for contact resonance 用于接触共振的3d打印压电驱动自传感悬臂

IF 3.1

Micro and Nano Engineering Pub Date : 2025-12-01 Epub Date: 2025-11-09 DOI: 10.1016/j.mne.2025.100335

Enrique Sánchez-Gómez, Víctor Ruiz-Díez, Jorge Hernando-García

{"title":"3D-printed piezoelectrically-actuated self-sensing cantilever for contact resonance","authors":"Enrique Sánchez-Gómez, Víctor Ruiz-Díez, Jorge Hernando-García","doi":"10.1016/j.mne.2025.100335","DOIUrl":"10.1016/j.mne.2025.100335","url":null,"abstract":"<div><div>The assessment of mechanical properties is essential across a wide range of scientific and engineering disciplines. Among the available techniques, contact resonance stands out for its sensitivity and resolution. Traditionally associated with atomic force microscopy, this method operates in the nanonewton force range using nanometer-scale tip radii and relies on complex optical detection systems. However, applications involving biological materials, such as plant tissues, might require higher forces, typically in the micronewton range, and larger indenters at the micron scale to minimize local stress. In this work, we present a contact resonance system based on 3D-printed cantilevers designed to operate at micronewton force levels. Both actuation and detection of vibrational modes are achieved using piezoelectric materials, enabling a fully electrical setup that eliminates the need for optical components. The indenters are fabricated from tungsten via electrochemical etching, allowing precise control over tip geometry at the micrometer scale. The system successfully detects frequency shifts upon contact with materials exhibiting elastic moduli from a few to several tens of gigapascals, offering a versatile and cost-effective alternative for mechanical property evaluation.</div></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"29 ","pages":"Article 100335"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145525349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0