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LUMINESCENCE OF COLLOIDAL CdSe:Cu NANOCRYSTALS 胶体CdSe:Cu纳米晶体的发光特性
Sensor Electronics and Microsystem Technologies Pub Date : 2023-01-23 DOI: 10.18524/1815-7459.2022.4.271202
Yury A. Nitsuk, O. V. Karaush, Y. Lepikh, Yu. F. Vaksman, G. V. Korenkova
{"title":"LUMINESCENCE OF COLLOIDAL CdSe:Cu NANOCRYSTALS","authors":"Yury A. Nitsuk, O. V. Karaush, Y. Lepikh, Yu. F. Vaksman, G. V. Korenkova","doi":"10.18524/1815-7459.2022.4.271202","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.4.271202","url":null,"abstract":"The luminescence of Colloidal CdSe:Cu nanocrystals was studied. It is shown that copper doping does not lead to a noticeable change in the size of nanocrystallites. The change in the band gap width can be explained by the inter- impurity Coulomb interaction. It is shown that copper doping leads to quenching of exciton luminescence of CdSe. It is established that the long-wave luminescence of CdSe:Cu is caused by transitions within the donor- acceptor pairs, which include intrinsic and impurity Cu defects.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129097700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SYNTHESIS OF NOBLE METAL NANOPARTICLES AND THEIR USE IN SENSOR DEVICES, PART 1: SYNTHESIS OF Ag, Au NANOPARTICLES 贵金属纳米颗粒的合成及其在传感器中的应用。第1部分:银、金纳米颗粒的合成
Sensor Electronics and Microsystem Technologies Pub Date : 2023-01-23 DOI: 10.18524/1815-7459.2022.4.271204
V. Skobeeva, V. Smyntyna, Y. Lepikh
{"title":"SYNTHESIS OF NOBLE METAL NANOPARTICLES AND THEIR USE IN SENSOR DEVICES, PART 1: SYNTHESIS OF Ag, Au NANOPARTICLES","authors":"V. Skobeeva, V. Smyntyna, Y. Lepikh","doi":"10.18524/1815-7459.2022.4.271204","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.4.271204","url":null,"abstract":"Noble metal nanoparticles are of great importance in the field of biomedicine due to their very diverse applications as antivirals drugs, diagnostic methods, drug carriers and imaging probes. These nanosized materials, in particular gold and silver nanoparticles, are useful as optical probes for detecting a wide range of biological analytes and as promising candidates for the development of highly reliable and ultrasensitive metal nanobiosensors. The success of the practical application nanoparticles depends on the development of safety, simple, efficient, scalable and environmentally friendly synthesis methods. For this has been successfully developed various green protocols using a variety of plant species, algae, fungi, bacteria and other microorganisms.\u0000In the first part of this article have been presented information about traditional methods for the synthesis of nanoparticles, with an emphasis on the most common, chemical method, an overview of recent advances in the field of green synthesis of metal nanoparticles involving plants, their likely synthetic mechanism, characterization methods and factors influencing their synthesis. Have been determined the problems of biological synthesis and ways to solve them in the future.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117027230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DETECTION OF SIGNS OF DEGRADATION OF PHOSPHIDE-GALLIUM LEDS BY THE LEVEL OF LOW-FREQUENCY NOISES 利用低频噪声水平检测磷化镓发光二极管的退化迹象
Sensor Electronics and Microsystem Technologies Pub Date : 2023-01-23 DOI: 10.18524/1815-7459.2022.4.271200
I. Vikulin, B. V. Korobitsin, P. Markolenko, O. A. Nazarenko
{"title":"DETECTION OF SIGNS OF DEGRADATION OF PHOSPHIDE-GALLIUM LEDS BY THE LEVEL OF LOW-FREQUENCY NOISES","authors":"I. Vikulin, B. V. Korobitsin, P. Markolenko, O. A. Nazarenko","doi":"10.18524/1815-7459.2022.4.271200","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.4.271200","url":null,"abstract":"The results of measurements of low-frequency noises of light-emitting diodes are considered. It has been established that LEDs with an increased level of noise or with anomalous their growth kinetics in the first hours of testing are potentially unreliable, that is, they show further rapid or catastrophic degradation (failure). The prospects of noise measurements for the selection of LEDs in terms of reliability are shown.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132844455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A THEORETICAL MODEL FOR DESCRIPTION OF WORK FUNCTION LOWERING FOR SEMICONDUCTOR / INSULATOR UNDER THE INFLUENCE OF THE CHARGED BILAYER IN THE SURFACE REGION 一个描述表面带电双分子层影响下半导体/绝缘体功函数降低的理论模型
Sensor Electronics and Microsystem Technologies Pub Date : 2022-10-18 DOI: 10.18524/1815-7459.2022.3.265293
M. Strikha, A. Goriachko
{"title":"A THEORETICAL MODEL FOR DESCRIPTION OF WORK FUNCTION LOWERING FOR SEMICONDUCTOR / INSULATOR UNDER THE INFLUENCE OF THE CHARGED BILAYER IN THE SURFACE REGION","authors":"M. Strikha, A. Goriachko","doi":"10.18524/1815-7459.2022.3.265293","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.3.265293","url":null,"abstract":"We develop a simple theoretical model, connecting a  lowering of the electron affinity of a semiconductor  (or insulator) with such parameters as the density of  surface charge, localized on surface states or  adsorbed atoms, and the volume density of charge  within the space charge region, both of which form a charged bilayer on the surface. Our model allows to estimate the perspectiveness of various materials as films for creating modern photocathodes or effective field emission cathodes with substantially lowered or zero work function.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128057774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
AGAIN ABOUT THE ATTITUDE TO SCIENCE IN UKRAINE (based on the materials of the report at the general assembly of the department of physics and astronomy of the National Academy of Sciences of Ukraine held on June 14, 2022) 再谈乌克兰对科学的态度(根据2022年6月14日乌克兰国家科学院物理与天文学系全体会议报告材料)
Sensor Electronics and Microsystem Technologies Pub Date : 2022-10-18 DOI: 10.18524/1815-7459.2022.3.265291
V. M. Loktev
{"title":"AGAIN ABOUT THE ATTITUDE TO SCIENCE IN UKRAINE (based on the materials of the report at the general assembly of the department of physics and astronomy of the National Academy of Sciences of Ukraine held on June 14, 2022)","authors":"V. M. Loktev","doi":"10.18524/1815-7459.2022.3.265291","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.3.265291","url":null,"abstract":"The peculiarity of this article, which analyzes various aspects of the scientific activity of the institutes of the Department of Physics and Astronomy of the  National Academy of Sciences of Ukraine, the  National Academy of Sciences as a whole, is that it  discusses the conditions under which it is necessary to work during the reporting period and in the near  future, namely, in the conditions of a full-scale war with Moscow for its independence.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125079858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INFLUENCE OF GRAPHITE FILM THICKNESS ON ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRAPHITE/n-Si SCHOTTKY-TYPE HETEROJUNCTION 石墨薄膜厚度对石墨/n-Si肖特基异质结电学和光电性能的影响
Sensor Electronics and Microsystem Technologies Pub Date : 2022-10-18 DOI: 10.18524/1815-7459.2022.3.265294
S. Kuryshchuk, A. Mostovyi, I. Koziarskyi, M. Solovan
{"title":"INFLUENCE OF GRAPHITE FILM THICKNESS ON ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRAPHITE/n-Si SCHOTTKY-TYPE HETEROJUNCTION","authors":"S. Kuryshchuk, A. Mostovyi, I. Koziarskyi, M. Solovan","doi":"10.18524/1815-7459.2022.3.265294","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.3.265294","url":null,"abstract":"Graphite /n-Si Schottky diodes were fabricated by  electron beam evaporation of graphite thin films on  n-type silicon substrates. The influence of the  thickness of graphite films on the photoelectric and electrical properties of these diodes has been  studied. It is determined that our Schottky diodes  can be used as photodiodes and solar cells. The  temperature dependences of shunt and series  resistances of diodes were also investigated.\u0000In the case of forward and reverse bias, the dominant  mechanisms of current transfer through the studied diodes were determined. The responsivity and detectivity of graphite/n-Si Schottky diodes were also calculated.\u0000The studied heterojunctions have  pronounced diode characteristics with a rectification  coefficient for a structure with a thinner film RR ≈  5·102, and for a structure with a thicker film RR ≈ 102.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124771593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DETERMINATION OF FARADAY IMPEDANCE PARAMETERS TO INCREASE ACCURACY IN CONDUCTOMETRY AND OBTAIN ADDITIONAL DATA 测定法拉第阻抗参数以提高电导测量的准确性并获得额外的数据
Sensor Electronics and Microsystem Technologies Pub Date : 2022-10-18 DOI: 10.18524/1815-7459.2022.3.265297
V. Melnyk, P. Borshchov, O. Vasylenko, O. L. Lameko, S. V. Dzyadevyc
{"title":"DETERMINATION OF FARADAY IMPEDANCE PARAMETERS TO INCREASE ACCURACY IN CONDUCTOMETRY AND OBTAIN ADDITIONAL DATA","authors":"V. Melnyk, P. Borshchov, O. Vasylenko, O. L. Lameko, S. V. Dzyadevyc","doi":"10.18524/1815-7459.2022.3.265297","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.3.265297","url":null,"abstract":"A simple algorithm for determining the set of parameters of the equivalent circuits of the impedance of a planar conductometric transducer  with an interdigital comb topology, consisting of  interelectrode and Faraday impedances is proposed.  The frequency characteristics of the impedance parameters of the transducer samples and the  electrical equivalent with averaged values of the parameters have been studied. A technique for determining the parameters of a three-element equivalent circuit, including solution resistance,  double layer capacitance, and charge transfer  resistance, has been developed and tested on a  series of transducer samples. The optimal operating  frequencies of the impedance-measuring channel are determined, and its schemes are developed. A  technique for estimating the parameters of the Warburg impedance of transducer samples is  demonstrated. The results obtained in the work  make it possible to determine the optimal operating  frequency range of biosensor systems and reduce  errors from the influence of the Faraday impedance. The possibility of extending the functions of such transducers by using the near-electrode layer  impedance parameters as informative ones is shown.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126411746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SENSORY PROPERTIES OF NANOCOMPOSITES OF ELECTROCONDUCTING POLYMERS TOWARDS TOXIC AND EXPLOSIVE VOLATILE COMPOUNDS 导电聚合物纳米复合材料对有毒和爆炸性挥发性化合物的感觉特性
Sensor Electronics and Microsystem Technologies Pub Date : 2022-07-07 DOI: 10.18524/1815-7459.2022.1/2.258453
A. V. Mamykin, O. Kukla, A. S. Pavluchenko, L. Matvienko, I. V. Mogylnyi, A. Pud, N. Ogurtsov, Yuriy Noskov
{"title":"SENSORY PROPERTIES OF NANOCOMPOSITES OF ELECTROCONDUCTING POLYMERS TOWARDS TOXIC AND EXPLOSIVE VOLATILE COMPOUNDS","authors":"A. V. Mamykin, O. Kukla, A. S. Pavluchenko, L. Matvienko, I. V. Mogylnyi, A. Pud, N. Ogurtsov, Yuriy Noskov","doi":"10.18524/1815-7459.2022.1/2.258453","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.1/2.258453","url":null,"abstract":"This work is devoted to the study of sensory properties of nanocomposites of electrically conductive polymers towards a number of phosphorus and organochlorine volatile compounds that are simulators of toxic gaseous substances, as well as nitroaromatic simulators of explosive organic substances. Gas sensitivity measurements were performed using an array of chemoresistive sensor microelectrodes covered with thin layers of these nanocomposites. The relative responses was at the level of 4–5%, the detection threshold depending on the type of analyzed toxic substances was from 10 to 100 ppm, the response rate was about 1 minute. The possibility of qualitative identification of toxic and explosive substances in a wide range of concentrations using the methods of statistical analysis of data from the sensory array has been demonstrated.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128338181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
POROUS SILICON NANOSYSTEMS FOR ETHANOL SENSOR 乙醇传感器用多孔硅纳米系统
Sensor Electronics and Microsystem Technologies Pub Date : 2022-07-07 DOI: 10.18524/1815-7459.2022.1/2.254481
I. Olenych, L. Monastyrskii
{"title":"POROUS SILICON NANOSYSTEMS FOR ETHANOL SENSOR","authors":"I. Olenych, L. Monastyrskii","doi":"10.18524/1815-7459.2022.1/2.254481","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.1/2.254481","url":null,"abstract":"Sensory elements based on hybrid films containing porous silicon and reduced graphene oxide nanostructures have been created. A decrease in electrical resistance and an increase in the capacitance of sensor elements in the AC mode due to the adsorption of ethanol molecules have been registered. To assess the sensory properties of hybrid films, the concentration dependences of the adsorption ability in the 0–4.5% range were determined and the dynamic characteristics of ethanol sensors based on them were studied. It was found that sensor films with different ratios of porous silicon and reduced graphene oxide nanoparticles have the maximum sensitivity to ethanol in different concentration ranges. The functional properties of hybrid films can be controlled by changing the proportions of their components. The reaction time of sensory elements to changes in the concentration of ethanol molecules is 40–50 s. The obtained results expand the perspective of the application of nanosystems based on porous silicon in sensor devices.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116070224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
FUNDAMENTAL LIMITS FOR THE LENGTH OF CONDUCTION CHANNEL IN THE FET ON TRANSITION METALS DICHALCOGENIDE SINGLE LAYER BASE 过渡金属二硫化物单层基上场效应晶体管传导通道长度的基本限制
Sensor Electronics and Microsystem Technologies Pub Date : 2022-07-07 DOI: 10.18524/1815-7459.2022.1/2.258445
М. Strikha, К. O. Коrzh
{"title":"FUNDAMENTAL LIMITS FOR THE LENGTH OF CONDUCTION CHANNEL IN THE FET ON TRANSITION METALS DICHALCOGENIDE SINGLE LAYER BASE","authors":"М. Strikha, К. O. Коrzh","doi":"10.18524/1815-7459.2022.1/2.258445","DOIUrl":"https://doi.org/10.18524/1815-7459.2022.1/2.258445","url":null,"abstract":"The modeling of the limits of functionality for the FET with conduction channel on transition metals dichalcogenide single layer base and with different source/drain contacts material was performed in this article. The quantum mechanical transparency of the channel barrier was calculated with allowance for the realistic form of the barrier potential. It is demonstrated, that the FET with 4-nm channel of n-MoS2 and MoS2 (metallic modification) source/drain contacts retains high level of functionality for the range of comparatively low gate and drain voltages (the barrier transparency is lower than ½). The similar FET with Pt source/drain contacts, when Schottky barrier is essentially higher and the barrier transparency is essentially lower, keep it’s functionality for the 2 nm channel as well for all the realistic values of gate and drain voltages. The similar result was obtained for the FET with p-WSe2 channel and Pd contacts as well. The obtained estimations confirm the possibility of the complementary inverter on MoS2 n-type FET and WSe2 p-type FET with ultra-short channels in 2–4 nm range.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133281369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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