S. Kuryshchuk, A. Mostovyi, I. Koziarskyi, M. Solovan
{"title":"石墨薄膜厚度对石墨/n-Si肖特基异质结电学和光电性能的影响","authors":"S. Kuryshchuk, A. Mostovyi, I. Koziarskyi, M. Solovan","doi":"10.18524/1815-7459.2022.3.265294","DOIUrl":null,"url":null,"abstract":"Graphite /n-Si Schottky diodes were fabricated by electron beam evaporation of graphite thin films on n-type silicon substrates. The influence of the thickness of graphite films on the photoelectric and electrical properties of these diodes has been studied. It is determined that our Schottky diodes can be used as photodiodes and solar cells. The temperature dependences of shunt and series resistances of diodes were also investigated.\nIn the case of forward and reverse bias, the dominant mechanisms of current transfer through the studied diodes were determined. The responsivity and detectivity of graphite/n-Si Schottky diodes were also calculated.\nThe studied heterojunctions have pronounced diode characteristics with a rectification coefficient for a structure with a thinner film RR ≈ 5·102, and for a structure with a thicker film RR ≈ 102.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"INFLUENCE OF GRAPHITE FILM THICKNESS ON ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRAPHITE/n-Si SCHOTTKY-TYPE HETEROJUNCTION\",\"authors\":\"S. Kuryshchuk, A. Mostovyi, I. Koziarskyi, M. Solovan\",\"doi\":\"10.18524/1815-7459.2022.3.265294\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Graphite /n-Si Schottky diodes were fabricated by electron beam evaporation of graphite thin films on n-type silicon substrates. The influence of the thickness of graphite films on the photoelectric and electrical properties of these diodes has been studied. It is determined that our Schottky diodes can be used as photodiodes and solar cells. The temperature dependences of shunt and series resistances of diodes were also investigated.\\nIn the case of forward and reverse bias, the dominant mechanisms of current transfer through the studied diodes were determined. The responsivity and detectivity of graphite/n-Si Schottky diodes were also calculated.\\nThe studied heterojunctions have pronounced diode characteristics with a rectification coefficient for a structure with a thinner film RR ≈ 5·102, and for a structure with a thicker film RR ≈ 102.\",\"PeriodicalId\":367487,\"journal\":{\"name\":\"Sensor Electronics and Microsystem Technologies\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensor Electronics and Microsystem Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.18524/1815-7459.2022.3.265294\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensor Electronics and Microsystem Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.18524/1815-7459.2022.3.265294","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
INFLUENCE OF GRAPHITE FILM THICKNESS ON ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRAPHITE/n-Si SCHOTTKY-TYPE HETEROJUNCTION
Graphite /n-Si Schottky diodes were fabricated by electron beam evaporation of graphite thin films on n-type silicon substrates. The influence of the thickness of graphite films on the photoelectric and electrical properties of these diodes has been studied. It is determined that our Schottky diodes can be used as photodiodes and solar cells. The temperature dependences of shunt and series resistances of diodes were also investigated.
In the case of forward and reverse bias, the dominant mechanisms of current transfer through the studied diodes were determined. The responsivity and detectivity of graphite/n-Si Schottky diodes were also calculated.
The studied heterojunctions have pronounced diode characteristics with a rectification coefficient for a structure with a thinner film RR ≈ 5·102, and for a structure with a thicker film RR ≈ 102.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
