Sensor Electronics and Microsystem Technologies最新文献

{"title":"AN ARRAY OF ENZYME BIOSENSORS FOR THE DETERMINATION OF CONCENTRATIONS OF NEUROTRANSMITTERS AND METABOLITES","authors":"Д. Ю. Кучеренко, І. С. Кучеренко, О. О. Солдаткін, Я. В. Топольнікова, Д. В. Книжникова, С. В. Дзядевич, О. П. Солдаткін","doi":"10.18524/1815-7459.2018.2.136887","DOIUrl":"https://doi.org/10.18524/1815-7459.2018.2.136887","url":null,"abstract":"","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125830189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DETERMINATION OF BARRIER HEIGHT OF Ni-SEMICONDUCTOR CONTACTS BY PHOTOELECTRIC METHOD","authors":"В. П. Махній, М. М. Березовський, В. М. Склярчук, О. М. Сльотов","doi":"10.18524/1815-7459.2018.2.136883","DOIUrl":"https://doi.org/10.18524/1815-7459.2018.2.136883","url":null,"abstract":"","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114867957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"STRUCTURE AND OPTICALLY PROPERTIES OF THE ZnSO LAYERS PREPARED BY THERMAL OXIDATION OF ZnS THIN FILMS","authors":"В. В. Хом’як","doi":"10.18524/1815-7459.2018.2.136890","DOIUrl":"https://doi.org/10.18524/1815-7459.2018.2.136890","url":null,"abstract":". We have grown ZnS thin films by means of the radiofrequency (RF) magnetron sputtering technique onto c-Al 2 O 3 and Si substrates at a temperature of 300°С. An effect of thermal annealing on air in a temperature range from 450°С to 800°С on the properties of the deposited films was studied and discussed. It was found that the annealing of the ZnS films leads to a formation both ZnSО layers with different sulfur/oxygen content and pure ZnО layers. It is evidenced by XRD data and optical transmission measurements. An analysis of the optical transmission spectra allowed determining a dependence of the band-gap energy of the films on the conditions of the thermal oxidations on air. Summary The purpose of this paper is the growth of ZnS thin films using the radio-frequency (rf) magnetron sputtering; studying the effect of thermal annealing in air on the process of incorporation of oxygen anions into ZnS matrix; formation of ZnO 1-x Se x alloy films and investigation of their structural, electri-cal and optical properties. Methods of research. The crystalline structure and concentration of sulfur in grown films were investigated using DRON-4 technique within X-ray diffraction (XRD) and X-ray photo electronic spectroscopy (XPS), respectively. The optical transmission spectra were measured at 300 K using the advanced universal MDR-23 technique. The annealing was carried out in air at temperature Т а , varying from 350 °С to 800 °С, during three hours. Results of research. The XRD spectrum of newly grown ZnS films has the only one peak, which is characteristic for the cubic ZnS. At Т а varying from 450 °С to 700 °С, the mixed ZnS and ZnO phases are observed. Only at Т а ≥ 700 °C, ZnS completely transforms into ZnO with wurtsite structure. The grown ZnO 1-x S x films exhibit high transparency in the visible region of the spectrum (60 ÷ 90%). The value “bowing” of the parameter b = 3.5 eV, which characterizes the change in the width of the band gap E g (x), determined from the optical absorption spectra, was obtained. Conclusions. The presented results prove the possibility of guided control of the properties of ZnS films grown by rf-magnetron sputtering by choosing the optimal technological parameters, in particu-lar, temperature, annealing time, etc.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"2021 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126026217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"PHYSICAL PROCESSES THAT DETERMINE THE BEHAVIOR OF CURRENT IN n-ZnO/p-Si HETEROJUNCTIONS CREATED BY RF MAGNETRON SPUTTERING","authors":"В. В. Хом’як","doi":"10.18524/1815-7459.2018.2.136882","DOIUrl":"https://doi.org/10.18524/1815-7459.2018.2.136882","url":null,"abstract":"By setting down of ZnO thin films onto p-Si substrates by reactive high-frequency magnetron sputtering method at different growth temperatures and ratios of oxygen and argon partial pressures n-ZnO/p-Si heterostructures have been obtained. Adjustment of the oxygen amount during growth enables to control the physical properties of ZnO thin films as well as n-ZnO/p-Si heterojunctions. Current-voltage characteristics of these structures had distinct rectifying properties. To find out the physical processes that determine the behavior of current at forward and reverse bias the energy band diagrams of created electrical junctions have been built and analyzed.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126671452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"HETEROLAYERS OF ANISOTROPIC α-ZnSe FOR PHOTOSENSORS","authors":"М. М. Сльотов, Вікторія Вікторівна Мельник, О. М. Сльотов","doi":"10.18524/1815-7459.2018.2.136885","DOIUrl":"https://doi.org/10.18524/1815-7459.2018.2.136885","url":null,"abstract":"","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122552013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GAS ANALISIS SYSTEM BASED ON THE POROUS SILICON STRUCTURES","authors":"Л. С. Монастирський, І. Б. Оленич, О. І. Петришин, В. М. Лозинський","doi":"10.18524/1815-7459.2018.2.136891","DOIUrl":"https://doi.org/10.18524/1815-7459.2018.2.136891","url":null,"abstract":"","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127638849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DEVELOPMENT OF AN AMPEROMETRIC BIOSENSOR FOR THE ACETYLCHOLINE DETERMINATION IN BIOLOGICAL SAMPLES","authors":"Д. В. Книжникова, І. С. Кучеренко, О. О. Солдаткін, С. В. Дзядевич, О. П. Солдаткін","doi":"10.18524/1815-7459.2018.2.136886","DOIUrl":"https://doi.org/10.18524/1815-7459.2018.2.136886","url":null,"abstract":"The work is devoted to the development of amperometric biosensor for the determination of acetylcholine in biological samples. In the work, two different variants of co-immobilization of choline oxidase and acetylcholinesterase were compared, and two-layer method of immobilization was selected (acetylcholinesterase-based membrane was deposited as the first layer, and choline oxidase-based membrane – as the second layer). Next, influence of the solution properties (buffer capacity, ionic strength, pH) on the biosensor analytical characteristics was studied. It was shown that the biosensor is characterized by good signal reproducibility and operational stability. Selectivity of the biosensor towards substances, which can be present in biological samples, was evaluated. Main analytical characteristics of the biosensor (sensitivity, linear range, limit of detection, noise, drift, reproducibility of responses) were determined. It was proven that the developed biosensor could be used for the determination of acetylcholine concentrations in biological samples.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126317396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"THERMORESISTIVE BEHAVIOR OF THE SYSTEMS BASED ON CROSS-LINKED POLYURETHANES AND CARBON NANOTUBES","authors":"Едуард Анатолійович Лисенков, Є. В. Лобко, З. О. Гаголкіна, Д. А. Баклан, В. В. Клепко","doi":"10.18524/1815-7459.2019.2.171243","DOIUrl":"https://doi.org/10.18524/1815-7459.2019.2.171243","url":null,"abstract":"","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127903909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DEVELOPMENT OF ARGININE DEIMINASE BASED CONDUCTOMETRIC BIOSENSOR FOR ARGININE DETERMINATION","authors":"O. Soldatkin, I. Kucherenko, O. Y. Sayapina, D. Kucherenko, S. Marchenko, A. Soldatkin, S. Dzyadevych","doi":"10.18524/1815-7459.2021.2.235200","DOIUrl":"https://doi.org/10.18524/1815-7459.2021.2.235200","url":null,"abstract":"For the first time, a conductometric enzyme biosensor was developed to determine arginine concentrations. The bioselective membrane of the biosensor was formed by immobilization of arginine deiminase on the surface of gold planar transducer using covalent crosslinking of glutaraldehyde with bovine serum albumin. An effect of the solution characteristics (ionic strength, buffer capacity) on the biosensor functioning was studied. The proposed monoenzyme biosensor was shown to have high sensitivity to arginine (minimum limit of detection - 5 μM) and good selectivity towards possible interferents. The linear range of determination was from 10 to 800 μM. The biosensor sensitivity to arginine is 72 μS /μM. The developed biosensor was demonstrated to be promising for the arginine analysis in real samples.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124830223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}