胶体CdSe:Cu纳米晶体的发光特性

Sensor Electronics and Microsystem Technologies Pub Date : 2023-01-23 DOI:10.18524/1815-7459.2022.4.271202

Yury A. Nitsuk, O. V. Karaush, Y. Lepikh, Yu. F. Vaksman, G. V. Korenkova

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引用次数: 0

摘要

研究了胶体CdSe:Cu纳米晶体的发光特性。结果表明，铜的掺杂对纳米晶的尺寸没有明显的影响。带隙宽度的变化可以用杂质间的库仑相互作用来解释。结果表明，铜掺杂导致CdSe的激子发光猝灭。证实了CdSe:Cu的长波发光是由供体-受体对内的跃迁引起的，其中包括本征缺陷和杂质缺陷。

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LUMINESCENCE OF COLLOIDAL CdSe:Cu NANOCRYSTALS

The luminescence of Colloidal CdSe:Cu nanocrystals was studied. It is shown that copper doping does not lead to a noticeable change in the size of nanocrystallites. The change in the band gap width can be explained by the inter- impurity Coulomb interaction. It is shown that copper doping leads to quenching of exciton luminescence of CdSe. It is established that the long-wave luminescence of CdSe:Cu is caused by transitions within the donor- acceptor pairs, which include intrinsic and impurity Cu defects.

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Sensor Electronics and Microsystem Technologies

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