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A Study of Gold Ball Bond Intermetallic Formation in PEDs using Infra-Red Microscopy 红外显微镜研究ped中金球键金属间形成
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362118
P. Footner, B. Richards, C. E. Stephens, C. Amos
{"title":"A Study of Gold Ball Bond Intermetallic Formation in PEDs using Infra-Red Microscopy","authors":"P. Footner, B. Richards, C. E. Stephens, C. Amos","doi":"10.1109/IRPS.1986.362118","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362118","url":null,"abstract":"A novel technique, using infra-red microscopy in the reflection mode, has been used to examine gold-aluminium bond interconnections rapidly by imaging through the bulk silicon. Its use has led to the characterisation of the Au-Al interf ace and the degree of intermetallic formation in terms of a unique IR footprint. The database of footprints obtained from a range of heat-treated commercial product has allowed a good understanding of the bond quality and its possible effect on device reliability. Comparison with results from conventional failure analysis (FA) techniques has demonstrated its use for field failures. The method is eminently suitable as a tool for both qualification and testing exercises and for field failures.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128834761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Behavior of SiO2 Under High Electric Field/Current Stress Conditions 高电场/电流应力条件下SiO2的行为
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362138
A. Leblanc, W. Abadeer
{"title":"Behavior of SiO2 Under High Electric Field/Current Stress Conditions","authors":"A. Leblanc, W. Abadeer","doi":"10.1109/IRPS.1986.362138","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362138","url":null,"abstract":"Various results reported to-date by several investigators tend to give conflicting conclusions regarding the mechanism of dielectric degradation due to high electric fields. We have investigated the reasons for these differences and from this work have proposed a more unified model. We have found that as the electric field is increased first positive charges are created causing negative Vt shift. With higher E-fields a reversal in polarity of net charges was observed. Just prior to breakdown, the creation of electron traps was also accompanied by severe degradation in transconductance. This later degradation is due to interface damage giving rise to surface states. This degradation has the most detrimental effect on the dielectric life time. The effect of other levels of E-field/current injection stressing on life time is also investigated.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130469264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Some TEM Observations on Electromigrated Al and Al Alloy Interconnects 电迁移铝及铝合金互连的透射电镜观察
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362109
D. Sadana, O.M. Towner, M. Norcott, R. Ellwanger
{"title":"Some TEM Observations on Electromigrated Al and Al Alloy Interconnects","authors":"D. Sadana, O.M. Towner, M. Norcott, R. Ellwanger","doi":"10.1109/IRPS.1986.362109","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362109","url":null,"abstract":"Transmission electron microscopy has been performed on the stressed (typical current density 2 × 106 amp cm¿2) as well as failed regions of Al, Al-Si, Al-Ti, Al-Ti-Si, Al-Cu-Si and Al-Cr-Si test conductors. Metal thickness was 0.5 ¿m and linewidth was 4-5 ¿m. The metal films were sputter deposited orn SiO2 substrdtes (300-3000A) that were thermally grown by oxidizing single crystal Si wafers. Irregular shaped voids were observed in the pure Al at triple points of grair bourndaries and at the conductor edges, suggesting enharnced electromigration at these locations. In Al-alloys, the shdpe and location of voids was dependent on the type of impurity added. It appears that prectpitation of added impurities at the grdin bounddries in Al-alloy systems does rnot always ensure ernhanced electromigration resistance. Pheromenological models explaining the observed open-circuit failures in Al and Al-alloys are proposed.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121591289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Localization of Defects in Gate Oxides by Means of Tunneling Current Microscopy 隧道电流显微镜下栅极氧化物缺陷的定位
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362116
A. Dallmann
{"title":"Localization of Defects in Gate Oxides by Means of Tunneling Current Microscopy","authors":"A. Dallmann","doi":"10.1109/IRPS.1986.362116","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362116","url":null,"abstract":"With the Tunneling Current Microscopy (TCM) we could localize defects in gate oxides without destroying the thin oxide. The method was tested with different test structures and the results were compared with those of dielectrical breakdown measurements. Thus we received additional information about the lateral distribution of defects which were not available by the commonly used destructive breakdown measurements.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122627850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study of CMOS Latch-up by Laser Scanning and Voltage Contrast Techniques 用激光扫描和电压对比技术研究CMOS锁存
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362120
K. S. Wills, C. Pilch, A. Hyslop
{"title":"A Study of CMOS Latch-up by Laser Scanning and Voltage Contrast Techniques","authors":"K. S. Wills, C. Pilch, A. Hyslop","doi":"10.1109/IRPS.1986.362120","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362120","url":null,"abstract":"The susceptibility of CMOS devices to latch-up becomes of greater concern as the spacing between geometries is reduced. An advanced 1 micron CMOS device is used to examine various methods of determining where on the device latch-up might occur. Two of these methods are laser induced latch-up and scanning electron microscope (SEM) microprobe. A correlation is shown between the two methods.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125251584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Reliability of Thin Oxide Grown on Heavily Doped Polysilicon 在重掺杂多晶硅上生长的薄氧化物的可靠性
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362141
K. Shinada, N. Matsukawa, S. Morita, Y. Mikata, T. Usami, H. Nozawa
{"title":"Reliability of Thin Oxide Grown on Heavily Doped Polysilicon","authors":"K. Shinada, N. Matsukawa, S. Morita, Y. Mikata, T. Usami, H. Nozawa","doi":"10.1109/IRPS.1986.362141","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362141","url":null,"abstract":"The reliability of 100 - 200 A poly-oxide grown on heavily doped polysilicon was investigated mainly by TDDB measurements, compared with ~ 100 A tunnel oxide grown on high dose implanted Si substrate. For the lower phosphorus concentration polyoxide, cumulative failure rate is high at short stress time, slightly depending on stress electric field. The poly-oxide for the higher concentration wears out under the high stress electric field. The wearout phenomenon is considered to be attributed to positive charge generation, due to phosphorus atoms incorporated into poly-oxide. No wearout is observed for tunnel oxide on high dose implanted Si substrate. The TDDB characteristics can be explained by reduction in effective thickness for stoichiometric oxide.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"341 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117343069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Controlled Surface Contamination to Determine Surface Sensitivity of HVICS 控制表面污染以确定HVICS的表面灵敏度
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362140
J. Osenbach, R. Comizzoli, S. S. Voris
{"title":"Controlled Surface Contamination to Determine Surface Sensitivity of HVICS","authors":"J. Osenbach, R. Comizzoli, S. S. Voris","doi":"10.1109/IRPS.1986.362140","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362140","url":null,"abstract":"We report a technique that allows one to deposit on devices a controllable level of contamination as low as 108 atoms/cm2. Using this technique we were able to determine that surface contamination alone does not lead to reduced breakdown voltage of our high voltage PIN diodes. Good devices are essentially immune to surface contamination; however, \"bad\" devices are very sensitive to contamination. Contamination on the order of 1010 atoms/cm2 reduces the breakdown voltage of a defective diode by over 100V. We have proposed one possible model which describes the dependence of the breakdown voltage of a high voltage device on the applied bias, concentration of contamination, and field plate design. This model is based on the double layer theory of ionic solutions.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"11 suppl_1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115664120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliability of Trench Capacitors for VLSI Memories 超大规模集成电路存储器沟槽电容器的可靠性
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362136
D. Baglee, C. Beydler, P. Shih, M. Yashiro
{"title":"Reliability of Trench Capacitors for VLSI Memories","authors":"D. Baglee, C. Beydler, P. Shih, M. Yashiro","doi":"10.1109/IRPS.1986.362136","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362136","url":null,"abstract":"Trench capacitors will be used in high density memories, such as the 1Mbit or 4Mbit DRAM, in order to minimize the size of the chip. In this paper the properties and reliability of trench capacitors are discussed. We show that the leakage and break-down characteristics are dominated by the trench profile. Accelerated wearout shows that trench capacitors are suitable for 5V operation, and that alpha particle induced soft error rates are similar to, or better than, conventional planar devices.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130622701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Failure Analysis and Failure Mechanisms of High Voltage (530V) Gated Diode Crosspoint Arrays 高压(530V)门控二极管交点阵列失效分析及失效机理
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362121
P. K. Tse, J. Gammel, D. Schimmel, W. H. Becker, J. P. Ballantyne, T. J. Riley
{"title":"Failure Analysis and Failure Mechanisms of High Voltage (530V) Gated Diode Crosspoint Arrays","authors":"P. K. Tse, J. Gammel, D. Schimmel, W. H. Becker, J. P. Ballantyne, T. J. Riley","doi":"10.1109/IRPS.1986.362121","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362121","url":null,"abstract":"We analyzed the failure modes and failure mechanisms of high voltage (530V) Gated Diode Crosspoint arrays used in the 5ESS¿ switching system. Electrical measurements and defect etching results defined the failure patterns of field returns. Laboratory simulations were developed to reproduce each type of failure. The theory of the underlying mechanisms will be presented.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125962187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hot-Electron Trapping and Generic Reliability of p + Polysilicon/SiO2/Si Structures for Fine-Line CMOS Technology 精细线CMOS技术中p +多晶硅/SiO2/Si结构的热电子俘获和通用可靠性
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362131
L. Manchanda
{"title":"Hot-Electron Trapping and Generic Reliability of p + Polysilicon/SiO2/Si Structures for Fine-Line CMOS Technology","authors":"L. Manchanda","doi":"10.1109/IRPS.1986.362131","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362131","url":null,"abstract":"The generic reliability of p+ polysilicon/SiO2/Si structure has been investigated using avalanche injection method on MOS capacitors. Hot-electron trapping in p+ polysilicon/SiO2/Si capacitors with 250Å and 500Å thick oxides was compared with n+ polysilicon/SiO2/Si capacitors. For the identical injection conditions, p+ polysilicon gate capacitors show larger threshold voltage shifts compared to n+ polysilicon gate capacitors with the same thickness. These threshold voltage shifts were significantly reduced after the standard low temperature H2 anneal. A correlation of hot-electron trapping before and after the hydrogen anneal indicates that boron atoms themselves do not act as electron traps in SiO2, but the presence of boron in SiO2 enhances the water-related electron traps. A model is proposed and supported by Infrared measurements on TEOS and BTEOS films.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132943190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
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