隧道电流显微镜下栅极氧化物缺陷的定位

24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI:10.1109/IRPS.1986.362116

A. Dallmann

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引用次数: 0

摘要

利用隧道电流显微镜(TCM)可以在不破坏薄氧化物的情况下定位栅极氧化物中的缺陷。采用不同的测试结构对该方法进行了测试，并与介电击穿测试结果进行了比较。因此，我们获得了关于缺陷横向分布的额外信息，这是常用的破坏性击穿测量所无法获得的。

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Localization of Defects in Gate Oxides by Means of Tunneling Current Microscopy

With the Tunneling Current Microscopy (TCM) we could localize defects in gate oxides without destroying the thin oxide. The method was tested with different test structures and the results were compared with those of dielectrical breakdown measurements. Thus we received additional information about the lateral distribution of defects which were not available by the commonly used destructive breakdown measurements.

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24th International Reliability Physics Symposium

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