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24th International Reliability Physics Symposium最新文献

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A Practical VLSI Characterization and Failure Analysis System for the IC User 面向集成电路用户的实用VLSI表征与失效分析系统
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362115
R. King, J. Hiatt
{"title":"A Practical VLSI Characterization and Failure Analysis System for the IC User","authors":"R. King, J. Hiatt","doi":"10.1109/IRPS.1986.362115","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362115","url":null,"abstract":"Instrumentation for characterization and failure analysis of VLSI devices is described. The system combines functional and parametric test capability with voltage contrast imaging techniques. Digital signal processing allows comparison of good and bad devices to isolate faults. Reasonable cost and complexity makes the system appropriate for the IC user rather than limiting it to development applications. Specific application histories are presented.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133709751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Stress Dependent Activation Energy 应力相关活化能
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362105
J. McPherson
{"title":"Stress Dependent Activation Energy","authors":"J. McPherson","doi":"10.1109/IRPS.1986.362105","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362105","url":null,"abstract":"Due to recent reports of stress-dependent activation energy, a generalized Eyring model has been developed in order to better understand thermally activated failure mechanisms. The model predicts a stress-dependent activation energy provided two necessary requirements are satisfied: (1) the applied stress must be the same order of magnitude as the strength of the material and (2) the stress acceleration parameter ¿ must be a function of the temperature. This model has been successfully applied to diverse failure mechanisms such as: dielectric breakdown under electric-field stress, metal failure under mechanical stress, and electromigration failure under current density stress. Application of model to the specific case of electromigration suggests that the current density exponent N for failure is not a unique value but increases with current density from N=1 at J ¿ 1 × 105 A/cm2 to N¿2 at J ¿ 1 × 106 A/cm2.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125064243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 55
The Effect of Long-Term Stress on Filler-Induced Failure in High Density RAMs 长期应力对高密度填料失效的影响
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362111
Kazutoshi Miyamoto, O. Nakagawa, J. Mitsuhashi, H. Matsumoto
{"title":"The Effect of Long-Term Stress on Filler-Induced Failure in High Density RAMs","authors":"Kazutoshi Miyamoto, O. Nakagawa, J. Mitsuhashi, H. Matsumoto","doi":"10.1109/IRPS.1986.362111","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362111","url":null,"abstract":"The effect of long-term high temperature stress on the filler-induced failure in high density MOS RAMs was investigated. High temperature storage causes volume reduction in some plastic resins which enhances the local strong stress to RAM chip resulting in the filler-induced failure. This phenonenon is well explained by the increase of leakage current in p-n junction under local strong stress.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"35 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125720060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Analysis of Product Hot Electron Problems by Gated Emission Microscopy 用门控发射显微镜分析产品热电子问题
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362132
N. Khurana, C. Chiang
{"title":"Analysis of Product Hot Electron Problems by Gated Emission Microscopy","authors":"N. Khurana, C. Chiang","doi":"10.1109/IRPS.1986.362132","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362132","url":null,"abstract":"A new tool to analyze the hot electron problems at the product level is introduced. The method combines the latest night vision technology and computer image processing techniques to precisely locate the transistors most vulnerable to hot electron degradation. A dual microchannel intensifier is coupled to a solid state camera to detect and amplify the extremely faint light emitted by the transistors in saturation. Computer image processing techniques are then employed to boost the sensitivity. Time resolution of hot electron events is achieved by `gating' the intensifier. To date, we have achieved a time resolution of l5ns, spatial resolution of l¿m with a sensitivity of 10nA per ¿m of substrate current. At the sensitivity level of our instrument we can even detect hot electron events which cause no degradation.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"20 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127527135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
Electromigration in Aluminum to Tantalum Silicide Contacts 铝到硅化钽触点的电迁移
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362108
S. Steenwyk, E. F. Kankowski
{"title":"Electromigration in Aluminum to Tantalum Silicide Contacts","authors":"S. Steenwyk, E. F. Kankowski","doi":"10.1109/IRPS.1986.362108","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362108","url":null,"abstract":"The use of silicide interconnects in VLSI circuits is becoming common. However, little has been published on the aluminum to tantalum silicide contact window reliability. We report life test results for two geometries of Al-Si-Cu to TaSi2 contact windows. High activation energies, moderate sigmas and large current density exponents are observed. Detailed EMA using standard and novel SEM techniques shows aluminum void formation on the window sidewalls and at the Al/TaSi2 interface as one of the failure modes. Transition of the contact to a high resistance nonohmic state is another. We show these two modes of failure to occur within different temperature ranges and propose that this is due to differing activation energies. We conclude that the nonohmic failure mode will be dominant at typical operating temperatures but operating lifetimes of such structures can be hundreds of years.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131506886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Comprehensive Model for Humidity Testing Correlation 湿度测试相关性综合模型
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362110
D. Peck
{"title":"Comprehensive Model for Humidity Testing Correlation","authors":"D. Peck","doi":"10.1109/IRPS.1986.362110","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362110","url":null,"abstract":"This paper reviews all published life in humidity conditions vs life at 85C/85% RH for epoxy packages; 61 data points are used. An acceleration formula is described which provides direct extrapolation from test results in autoclave tests at up to at least 140C to low-humidity down to below 30XRH. This formula compares favorably with previously-published formulae. The possible effect of the Tg of the epoxy is recognized, and other high-temperature and low-humidity effects are disclosed. Recommendat ions are made for future tests, replacing 1000 hours at 85C/85%RH with a 20-hour test at 140C/100%RH, to reduce test time and increase test usefulness.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131602618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 205
Moisture Determination in IC Packages by Conductance Technique 电导法测定IC封装中的水分
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362113
N. Annamalai, S. Islam
{"title":"Moisture Determination in IC Packages by Conductance Technique","authors":"N. Annamalai, S. Islam","doi":"10.1109/IRPS.1986.362113","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362113","url":null,"abstract":"An a.c. conductance technique using a lock-in-amplifier (LIA) is described. The conductance technique is a non-destructive technique and uses the die as a sensor. Our experiments and theoretical calculations revealed that the moisture-induced conductance variation is 10 to 400% whereas the moisture-induced capacitance variation is 0 to 20%. Hence, even though capacitance and conductance values were measured, only conductance variations are reported. A circuit model has been developed to explain the observed experimental behavior. This technique is thus superior to capacitance technique in deterining the low levels of moisture (<5000ppmu) in IC packages. The selective condensation problem experienced in the Harris or Al2O3 sensors is non existent in the conductance technique. Since the applied voltage in the conductance method is ~l00mV, there is no dissociation of water into hydrogen and oxygen, as is possible in the case of Harris sensors. Further, the moisture content determined by this non-destructive technique correlates well with the residual gas analysis (RGA) by the mass spectrometer. This technique is non-destructive, reliable, rapid and suitable for in-line testing.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128325990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Infrared Microscopy as Applied to Failure Analysis of P-DIP Devices 红外显微技术在P-DIP器件失效分析中的应用
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362117
S. H. Lewis
{"title":"Infrared Microscopy as Applied to Failure Analysis of P-DIP Devices","authors":"S. H. Lewis","doi":"10.1109/IRPS.1986.362117","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362117","url":null,"abstract":"Infrared microscopy is an important tool to the failure analyst, and its uses in failure mode identification are becoming more varied and numerous. Recent advances in equipment have enabled high magnification examination with very good resolution when analyzing plastic encapsulated devices from the backside of the die. This paper will discuss various anomalies observable with this technique as well as sample preparation techniques and a description of the IR equipment used.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125016548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Radial Dependency of Reliability Defects on Silicon Wafers 硅片可靠性缺陷的径向依赖性
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362129
H. Bonges
{"title":"Radial Dependency of Reliability Defects on Silicon Wafers","authors":"H. Bonges","doi":"10.1109/IRPS.1986.362129","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362129","url":null,"abstract":"A study analyzing reliability defects with respect to their original wafer location has recently been completed at IBM Burlington. The results of this study, which showed such defects to have a high radial dependency, are discussed herein. Equally important to these results is the process by which the results were obtained, a process termed Laser Chip ID. This process of permanently identifying chips by using a laser was found to be extremely useful and is also discussed in this paper.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128965448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Bond Failure Mechanism A键失效机制
24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI: 10.1109/IRPS.1986.362112
Tim Koch, Wayne Richliug, J. Whitlock, Dave Hall
{"title":"A Bond Failure Mechanism","authors":"Tim Koch, Wayne Richliug, J. Whitlock, Dave Hall","doi":"10.1109/IRPS.1986.362112","DOIUrl":"https://doi.org/10.1109/IRPS.1986.362112","url":null,"abstract":"Intermittent continuity failures of P-DIP parts were found to be the result of wire bond failures induced by stresses associated with the assembly process. The bond failures were characterized by cracking of the underlying pad structure. It was found that silicon nodule precipitates from the aluminum metallization in the pad acted as points of high stress during the bonding of gold to the pad regions. By altering the bonding parameters and the underlying pad structure, failure of the bonds could be prevented.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129841272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
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