长期应力对高密度填料失效的影响

24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI:10.1109/IRPS.1986.362111

Kazutoshi Miyamoto, O. Nakagawa, J. Mitsuhashi, H. Matsumoto

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引用次数: 4

摘要

研究了长期高温应力对高密度MOS ram填料失效的影响。高温储存导致某些塑料树脂体积减小，增强了局部对RAM芯片的强应力，导致填料诱发失效。这种现象可以用局部强应力作用下p-n结漏电流的增大来解释。

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The Effect of Long-Term Stress on Filler-Induced Failure in High Density RAMs

The effect of long-term high temperature stress on the filler-induced failure in high density MOS RAMs was investigated. High temperature storage causes volume reduction in some plastic resins which enhances the local strong stress to RAM chip resulting in the filler-induced failure. This phenonenon is well explained by the increase of leakage current in p-n junction under local strong stress.

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24th International Reliability Physics Symposium

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