The Effect of Long-Term Stress on Filler-Induced Failure in High Density RAMs

Abstract

The effect of long-term high temperature stress on the filler-induced failure in high density MOS RAMs was investigated. High temperature storage causes volume reduction in some plastic resins which enhances the local strong stress to RAM chip resulting in the filler-induced failure. This phenonenon is well explained by the increase of leakage current in p-n junction under local strong stress.