{"title":"硅片可靠性缺陷的径向依赖性","authors":"H. Bonges","doi":"10.1109/IRPS.1986.362129","DOIUrl":null,"url":null,"abstract":"A study analyzing reliability defects with respect to their original wafer location has recently been completed at IBM Burlington. The results of this study, which showed such defects to have a high radial dependency, are discussed herein. Equally important to these results is the process by which the results were obtained, a process termed Laser Chip ID. This process of permanently identifying chips by using a laser was found to be extremely useful and is also discussed in this paper.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Radial Dependency of Reliability Defects on Silicon Wafers\",\"authors\":\"H. Bonges\",\"doi\":\"10.1109/IRPS.1986.362129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study analyzing reliability defects with respect to their original wafer location has recently been completed at IBM Burlington. The results of this study, which showed such defects to have a high radial dependency, are discussed herein. Equally important to these results is the process by which the results were obtained, a process termed Laser Chip ID. This process of permanently identifying chips by using a laser was found to be extremely useful and is also discussed in this paper.\",\"PeriodicalId\":354436,\"journal\":{\"name\":\"24th International Reliability Physics Symposium\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1986.362129\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1986.362129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Radial Dependency of Reliability Defects on Silicon Wafers
A study analyzing reliability defects with respect to their original wafer location has recently been completed at IBM Burlington. The results of this study, which showed such defects to have a high radial dependency, are discussed herein. Equally important to these results is the process by which the results were obtained, a process termed Laser Chip ID. This process of permanently identifying chips by using a laser was found to be extremely useful and is also discussed in this paper.
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