超大规模集成电路存储器沟槽电容器的可靠性

24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI:10.1109/IRPS.1986.362136

D. Baglee, C. Beydler, P. Shih, M. Yashiro

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引用次数: 2

摘要

沟槽电容将用于高密度存储器，如1Mbit或4Mbit DRAM，以尽量减小芯片的尺寸。本文讨论了沟槽电容器的性能和可靠性。结果表明，泄漏和击穿特性主要受沟槽剖面的影响。加速损耗表明，沟槽电容器适合5V工作，α粒子诱导的软误差率与传统平面器件相似或优于传统器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability of Trench Capacitors for VLSI Memories

Trench capacitors will be used in high density memories, such as the 1Mbit or 4Mbit DRAM, in order to minimize the size of the chip. In this paper the properties and reliability of trench capacitors are discussed. We show that the leakage and break-down characteristics are dominated by the trench profile. Accelerated wearout shows that trench capacitors are suitable for 5V operation, and that alpha particle induced soft error rates are similar to, or better than, conventional planar devices.

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24th International Reliability Physics Symposium

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