高压(530V)门控二极管交点阵列失效分析及失效机理

24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI:10.1109/IRPS.1986.362121

P. K. Tse, J. Gammel, D. Schimmel, W. H. Becker, J. P. Ballantyne, T. J. Riley

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引用次数: 1

摘要

分析了用于5ESS¿开关系统的高压(530V)门控二极管交点阵列的失效模式和失效机理。电测量和缺陷刻蚀结果定义了场回波的失效模式。开发了实验室模拟来重现每种类型的破坏。本文将介绍潜在机制的理论。

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Failure Analysis and Failure Mechanisms of High Voltage (530V) Gated Diode Crosspoint Arrays

We analyzed the failure modes and failure mechanisms of high voltage (530V) Gated Diode Crosspoint arrays used in the 5ESS¿ switching system. Electrical measurements and defect etching results defined the failure patterns of field returns. Laboratory simulations were developed to reproduce each type of failure. The theory of the underlying mechanisms will be presented.

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24th International Reliability Physics Symposium

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