Failure Analysis and Failure Mechanisms of High Voltage (530V) Gated Diode Crosspoint Arrays

Abstract

We analyzed the failure modes and failure mechanisms of high voltage (530V) Gated Diode Crosspoint arrays used in the 5ESS¿ switching system. Electrical measurements and defect etching results defined the failure patterns of field returns. Laboratory simulations were developed to reproduce each type of failure. The theory of the underlying mechanisms will be presented.