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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)最新文献

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MOSFET differential amplifier with input pair and active load pair being stress-sensitive both 输入对和有源负载对均为应力敏感的MOSFET差分放大器
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982019
Liang Jingjing, Yue Ruifeng, Liu Litian
{"title":"MOSFET differential amplifier with input pair and active load pair being stress-sensitive both","authors":"Liang Jingjing, Yue Ruifeng, Liu Litian","doi":"10.1109/ICSICT.2001.982019","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982019","url":null,"abstract":"The principles of stress sensitive differential amplifier (SSDA) are studied in detail, and a new idea of designing SSDA is presented. Using this idea, the sensitivity of the SSDA can be doubled without any extra cost in area, power, circuit complexity, etc. A HSPICE simulation result is also presented.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114296501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GaInAsSb/GaSb long wavelength mid-IR detectors GaInAsSb/GaSb长波中红外探测器
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982136
Binhe Wu, G. Xia, Z. Cheng, B. Liang, Zhihuai Li
{"title":"GaInAsSb/GaSb long wavelength mid-IR detectors","authors":"Binhe Wu, G. Xia, Z. Cheng, B. Liang, Zhihuai Li","doi":"10.1109/ICSICT.2001.982136","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982136","url":null,"abstract":"As one of the important materials systems in the application of mid-IR, GaInAsSb has shown its promising usage in the range of 2-5 /spl mu/m. In this paper, we will present the method and experiment of adding AlGaAsSb window layer to suppress the dark current of the GaInAsSb/GaSb photodiode. This method is effective. The dark current can degrade a lot after the growth of such a window layer. Also, the measured refractive index of the material is presented in this paper. It is useful for looking for the proper passivation material for GaInAsSb.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114547035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
17-36 GHz broadband PHEMT MMIC power amplifier for point-to-multipoint applications 17-36 GHz宽带PHEMT MMIC功率放大器，用于点对多点应用
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982144
Y. Lee, C. Park
{"title":"17-36 GHz broadband PHEMT MMIC power amplifier for point-to-multipoint applications","authors":"Y. Lee, C. Park","doi":"10.1109/ICSICT.2001.982144","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982144","url":null,"abstract":"A broadband MMIC power amplifier operating from 17 to 36 GHz is developed for point-to-multipoint applications using 0.25 /spl mu/m AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT). The amplifier is fully monolithic, with all matching, biasing, and DC block circuitry included on the chip. Operated under 5 V power supply, the two-stage balanced power amplifier has 11 dB small-signal gain with a 3 dB bandwidth from 17 to 36 GHz. The output powers at 1 dB compression are 20 dBm at 26 and 28 GHz and greater than 23 dBm at 30.5 GHz.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114796836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design and fabrication of micromechanical variable fiber-optic attenuator 微机械可变光纤衰减器的设计与制造
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982003
Wenjun Li, Xiaolin Zhao, B. Cai, Guangya Zhou, Mingsheng Zhang, Xuhan Dai
{"title":"Design and fabrication of micromechanical variable fiber-optic attenuator","authors":"Wenjun Li, Xiaolin Zhao, B. Cai, Guangya Zhou, Mingsheng Zhang, Xuhan Dai","doi":"10.1109/ICSICT.2001.982003","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982003","url":null,"abstract":"An electromagnetically actuated MEMS variable fiberoptic attenuator was designed and fabricated. The device consists of an electromagnetic microactuator, a fiber alignment component, a ferronickel shutter, and two single mode fibers. The shutter actuated by the microactuator was interposed in the gap between input and output fiber, which can regulate the optical output. Non-silicon surface micromachining technology, which uses copper layer as the sacrificial layer and the electroplated ferronickel as the structure layer, was used to fabricate the shutter. The magnetic and mechanical behaviour of the device was investigated by using analytical methods and ANSYS FEM, and some its geometric structural parameters were then optimized. The attenuator has less than 3dB-insertion loss at 1550nm, greater than 45dB dynamic range, and better than 40dB return loss.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116747583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The composition study of silicon oxynitride prepared by PECVD PECVD法制备氮化氧硅的组成研究
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982086
Yaping Dan, Ruifeng Yue, Yan Wang, Yongzhao Yao, Yang Xu, Litian Liu
{"title":"The composition study of silicon oxynitride prepared by PECVD","authors":"Yaping Dan, Ruifeng Yue, Yan Wang, Yongzhao Yao, Yang Xu, Litian Liu","doi":"10.1109/ICSICT.2001.982086","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982086","url":null,"abstract":"A full range SiO/sub x/N/sub y/ from SiO/sub 2/ to Si/sub 3/N/sub 4/ is prepared by decomposing mixture of SiH/sub 4/, NH/sub 3/ and N/sub 2/O in commercial RF PECVD reactors. All samples are annealed in N/sub 2/ atmosphere for 30 min at 600/spl deg/C, 750/spl deg/C, 900/spl deg/C and analyzed by IR spectroscopy. It is shown that the main peak assigned to Si-(O, N) stretching mode downshifts when approaching to near stoichiometric Si/sub 3/N/sub 4/ and the segregation into Si/sub 3/N/sub 4/ and SiO/sub 2/ and Si(O/sub x/N/sub y/H/sub z/) tetrahedra from SiO/sub x/N/sub y/ occurs after 750/spl deg/C annealing.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115760636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A quantitative analysis of stress-induced leakage currents in ultra-thin silicon dioxide films 超薄二氧化硅薄膜中应力诱发泄漏电流的定量分析
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982054
T. Endoh
{"title":"A quantitative analysis of stress-induced leakage currents in ultra-thin silicon dioxide films","authors":"T. Endoh","doi":"10.1109/ICSICT.2001.982054","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982054","url":null,"abstract":"A quantitative analysis of stress-induced leakage currents (SILCs) in ultra-thin silicon dioxide films is described, which enables the extraction of trap parameters, e.g. trap site location. Assuming a two-step trap-assisted inelastic tunneling mechanism, conduction of electrons through silicon dioxide films proceeds as follows: First, electrons tunnel from the cathode into neutral trap sites followed by an energy relaxation into the lowest available energy state of these trap sites. Finally, electrons reach the anode by a direct tunneling process. Modeling SILC characteristics of a stressed 6.8-nm-thick SiO/sub 2/ film reveal a trap site location at 4.47 nm relative to the cathode interface. SILCs in the thickness range from 5.1 to 9.6-nm can be explained by the linear increase of the trap sheet charge density on oxide thickness, which suppresses local tunneling currents between cathode interface and trap sites by a reduction of the local oxide electric field.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115008217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Resonant Raman scattering in hydrogenated amorphous silicon films 氢化非晶硅薄膜的共振拉曼散射
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982085
Yan Wang, Ruifeng Yue, Litian Liu
{"title":"Resonant Raman scattering in hydrogenated amorphous silicon films","authors":"Yan Wang, Ruifeng Yue, Litian Liu","doi":"10.1109/ICSICT.2001.982085","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982085","url":null,"abstract":"Micro-Raman measurements were carried out to investigate the microstructure of a-Si:H samples prepared by plasma enhanced chemical vapor deposition (PECVD) using 647.1 nm and 514.5 nm laser lines as excitation sources. It is found that the frequency of TO mode downshifts with increasing excited photon energy without significantly changing its width, while LO mode expands to a large extent. The above results suggest that the variation of LO and TO mode is caused by resonant Raman effect. With the increasing of excitation energy, smaller a-Si clusters are excited thus results in large redshift of TO band according to the quantum confinement effect, another possible explanation may be related with the existing of a highly disordered layer near the free surface in a-Si:H film. In conjunction with observation of LO band variation, we further deduce that the highly disordered layer may have lower H content.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123085029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of deposited Pt films induced by Focused Ion Beam 聚焦离子束诱导沉积Pt薄膜的研究
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982087
Liu Li-jian, Wang Jia-ji
{"title":"Investigation of deposited Pt films induced by Focused Ion Beam","authors":"Liu Li-jian, Wang Jia-ji","doi":"10.1109/ICSICT.2001.982087","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982087","url":null,"abstract":"The technique of Focused Ion Beam (FIB) induced deposition allows three-dimensional structures to be generated on the nanometer scale. This is achieved in a FIB equipped with a SIM that enables separate position and time control for every pixel. By decomposing adsorbed molecules with the ion beam, structures are created on arbitrarily chosen substrates with nm precision under computer control. Deposition metal can be produced using organometallic precursor materials. FIB induced deposition of platinum from a precursor gas of (C/sub 5/H/sub 4/)CH/sub 3/Pt(CH/sub 3/)/sub 3/ has been demonstrated in recent years. In this paper, the resistivity and composition of the deposited metal film induced by FIB and the deposition rate have been measured as a function of ion current density. The resistivity and the content of the carbon impurity are reduced as the ion current increases while the deposition rate and the content of platinum and gallium increases respectively.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123428515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Instability in post-breakdown conduction in ultra-thin gate oxide 超薄栅极氧化物击穿后导电的不稳定性
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982053
T.P. Chen, Y. Luo
{"title":"Instability in post-breakdown conduction in ultra-thin gate oxide","authors":"T.P. Chen, Y. Luo","doi":"10.1109/ICSICT.2001.982053","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982053","url":null,"abstract":"Both switching and snapback between two well-defined states (a lower impedance state and a high impedance state) in the post-breakdown conduction in ultra-thin silicon dioxide films have been observed, and a comparison between them was made. The current-voltage relationship of each state was found to follow a power law for both the switching and snapback. The switching and snapback can be explained in terms of the on/off state of a second conductive percolation path of neutral oxide traps due to the de-trapping/trapping or neutral trap generation at certain SiO/sub 2/ lattice sites (strategic positions) during the measurements.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"546 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123110512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of RF transistors: a historical prospect 射频晶体管的发展:历史展望
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982143
F. Schwierz, J. Liou
{"title":"Development of RF transistors: a historical prospect","authors":"F. Schwierz, J. Liou","doi":"10.1109/ICSICT.2001.982143","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982143","url":null,"abstract":"The development of RF transistors went almost unnoticed until the early 1980s because, unlike Si VLSI, there were no mass consumer markets for such devices. Most applications for RF transistors had been military oriented. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper covers the evolution and current status of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123156165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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