GaInAsSb/GaSb long wavelength mid-IR detectors

Abstract

As one of the important materials systems in the application of mid-IR, GaInAsSb has shown its promising usage in the range of 2-5 /spl mu/m. In this paper, we will present the method and experiment of adding AlGaAsSb window layer to suppress the dark current of the GaInAsSb/GaSb photodiode. This method is effective. The dark current can degrade a lot after the growth of such a window layer. Also, the measured refractive index of the material is presented in this paper. It is useful for looking for the proper passivation material for GaInAsSb.