GaInAsSb/GaSb长波中红外探测器

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982136

Binhe Wu, G. Xia, Z. Cheng, B. Liang, Zhihuai Li

{"title":"GaInAsSb/GaSb长波中红外探测器","authors":"Binhe Wu, G. Xia, Z. Cheng, B. Liang, Zhihuai Li","doi":"10.1109/ICSICT.2001.982136","DOIUrl":null,"url":null,"abstract":"As one of the important materials systems in the application of mid-IR, GaInAsSb has shown its promising usage in the range of 2-5 /spl mu/m. In this paper, we will present the method and experiment of adding AlGaAsSb window layer to suppress the dark current of the GaInAsSb/GaSb photodiode. This method is effective. The dark current can degrade a lot after the growth of such a window layer. Also, the measured refractive index of the material is presented in this paper. It is useful for looking for the proper passivation material for GaInAsSb.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaInAsSb/GaSb long wavelength mid-IR detectors\",\"authors\":\"Binhe Wu, G. Xia, Z. Cheng, B. Liang, Zhihuai Li\",\"doi\":\"10.1109/ICSICT.2001.982136\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As one of the important materials systems in the application of mid-IR, GaInAsSb has shown its promising usage in the range of 2-5 /spl mu/m. In this paper, we will present the method and experiment of adding AlGaAsSb window layer to suppress the dark current of the GaInAsSb/GaSb photodiode. This method is effective. The dark current can degrade a lot after the growth of such a window layer. Also, the measured refractive index of the material is presented in this paper. It is useful for looking for the proper passivation material for GaInAsSb.\",\"PeriodicalId\":349087,\"journal\":{\"name\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2001.982136\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2001.982136","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

GaInAsSb作为中红外应用中重要的材料体系之一，在2-5 /spl μ m范围内显示出良好的应用前景。在本文中，我们将介绍添加AlGaAsSb窗口层来抑制GaInAsSb/GaSb光电二极管暗电流的方法和实验。这个方法很有效。在这种窗口层生长后，暗电流会大大降低。并给出了该材料折射率的测量结果。这对于寻找合适的GaInAsSb钝化材料是有用的。

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GaInAsSb/GaSb long wavelength mid-IR detectors

As one of the important materials systems in the application of mid-IR, GaInAsSb has shown its promising usage in the range of 2-5 /spl mu/m. In this paper, we will present the method and experiment of adding AlGaAsSb window layer to suppress the dark current of the GaInAsSb/GaSb photodiode. This method is effective. The dark current can degrade a lot after the growth of such a window layer. Also, the measured refractive index of the material is presented in this paper. It is useful for looking for the proper passivation material for GaInAsSb.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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