超薄栅极氧化物击穿后导电的不稳定性

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982053

T.P. Chen, Y. Luo

{"title":"超薄栅极氧化物击穿后导电的不稳定性","authors":"T.P. Chen, Y. Luo","doi":"10.1109/ICSICT.2001.982053","DOIUrl":null,"url":null,"abstract":"Both switching and snapback between two well-defined states (a lower impedance state and a high impedance state) in the post-breakdown conduction in ultra-thin silicon dioxide films have been observed, and a comparison between them was made. The current-voltage relationship of each state was found to follow a power law for both the switching and snapback. The switching and snapback can be explained in terms of the on/off state of a second conductive percolation path of neutral oxide traps due to the de-trapping/trapping or neutral trap generation at certain SiO/sub 2/ lattice sites (strategic positions) during the measurements.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"546 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Instability in post-breakdown conduction in ultra-thin gate oxide\",\"authors\":\"T.P. Chen, Y. Luo\",\"doi\":\"10.1109/ICSICT.2001.982053\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Both switching and snapback between two well-defined states (a lower impedance state and a high impedance state) in the post-breakdown conduction in ultra-thin silicon dioxide films have been observed, and a comparison between them was made. The current-voltage relationship of each state was found to follow a power law for both the switching and snapback. The switching and snapback can be explained in terms of the on/off state of a second conductive percolation path of neutral oxide traps due to the de-trapping/trapping or neutral trap generation at certain SiO/sub 2/ lattice sites (strategic positions) during the measurements.\",\"PeriodicalId\":349087,\"journal\":{\"name\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"volume\":\"546 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2001.982053\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2001.982053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了超薄二氧化硅薄膜击穿后导电过程中两种明确的状态(低阻抗状态和高阻抗状态)之间的切换和回跳，并对两者进行了比较。每个状态的电流-电压关系都遵循幂律，无论是开关还是回跳。开关和snapback可以用中性氧化物陷阱的第二导电渗透路径的开/关状态来解释，这是由于在测量过程中在某些SiO/sub 2/晶格位置(战略位置)产生脱除/捕获或中性陷阱。

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Instability in post-breakdown conduction in ultra-thin gate oxide

Both switching and snapback between two well-defined states (a lower impedance state and a high impedance state) in the post-breakdown conduction in ultra-thin silicon dioxide films have been observed, and a comparison between them was made. The current-voltage relationship of each state was found to follow a power law for both the switching and snapback. The switching and snapback can be explained in terms of the on/off state of a second conductive percolation path of neutral oxide traps due to the de-trapping/trapping or neutral trap generation at certain SiO/sub 2/ lattice sites (strategic positions) during the measurements.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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