{"title":"输入对和有源负载对均为应力敏感的MOSFET差分放大器","authors":"Liang Jingjing, Yue Ruifeng, Liu Litian","doi":"10.1109/ICSICT.2001.982019","DOIUrl":null,"url":null,"abstract":"The principles of stress sensitive differential amplifier (SSDA) are studied in detail, and a new idea of designing SSDA is presented. Using this idea, the sensitivity of the SSDA can be doubled without any extra cost in area, power, circuit complexity, etc. A HSPICE simulation result is also presented.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"MOSFET differential amplifier with input pair and active load pair being stress-sensitive both\",\"authors\":\"Liang Jingjing, Yue Ruifeng, Liu Litian\",\"doi\":\"10.1109/ICSICT.2001.982019\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The principles of stress sensitive differential amplifier (SSDA) are studied in detail, and a new idea of designing SSDA is presented. Using this idea, the sensitivity of the SSDA can be doubled without any extra cost in area, power, circuit complexity, etc. A HSPICE simulation result is also presented.\",\"PeriodicalId\":349087,\"journal\":{\"name\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2001.982019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2001.982019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOSFET differential amplifier with input pair and active load pair being stress-sensitive both
The principles of stress sensitive differential amplifier (SSDA) are studied in detail, and a new idea of designing SSDA is presented. Using this idea, the sensitivity of the SSDA can be doubled without any extra cost in area, power, circuit complexity, etc. A HSPICE simulation result is also presented.