PECVD法制备氮化氧硅的组成研究

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982086

Yaping Dan, Ruifeng Yue, Yan Wang, Yongzhao Yao, Yang Xu, Litian Liu

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引用次数: 0

摘要

在商用RF PECVD反应器中，通过分解SiH/sub 4/、NH/sub 3/和N/sub 2/O的混合物，制备了从SiO/sub 2/到Si/sub 3/N/sub 4/的全系列SiO/sub x/N/sub y/。所有样品在600/spl℃、750/spl℃、900/spl℃的N/sub /气氛中退火30 min，并进行红外光谱分析。结果表明，当Si/sub - 3/N/sub - 4/接近化学量时，属于Si-(O, N)拉伸模式的主峰下降;750℃退火后，SiO/sub - x/N/sub - y/ SiO/sub - 3/N/sub - 4/、SiO/sub - 2/和Si(O/sub - x/N/sub - y/H/sub - z/)四面体由SiO/sub - x/N/sub - y/分离为Si/sub - 3/N/sub - 4/和SiO/sub - x/N/sub - y/H/sub - z/。

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The composition study of silicon oxynitride prepared by PECVD

A full range SiO/sub x/N/sub y/ from SiO/sub 2/ to Si/sub 3/N/sub 4/ is prepared by decomposing mixture of SiH/sub 4/, NH/sub 3/ and N/sub 2/O in commercial RF PECVD reactors. All samples are annealed in N/sub 2/ atmosphere for 30 min at 600/spl deg/C, 750/spl deg/C, 900/spl deg/C and analyzed by IR spectroscopy. It is shown that the main peak assigned to Si-(O, N) stretching mode downshifts when approaching to near stoichiometric Si/sub 3/N/sub 4/ and the segregation into Si/sub 3/N/sub 4/ and SiO/sub 2/ and Si(O/sub x/N/sub y/H/sub z/) tetrahedra from SiO/sub x/N/sub y/ occurs after 750/spl deg/C annealing.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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