Investigation of deposited Pt films induced by Focused Ion Beam

The technique of Focused Ion Beam (FIB) induced deposition allows three-dimensional structures to be generated on the nanometer scale. This is achieved in a FIB equipped with a SIM that enables separate position and time control for every pixel. By decomposing adsorbed molecules with the ion beam, structures are created on arbitrarily chosen substrates with nm precision under computer control. Deposition metal can be produced using organometallic precursor materials. FIB induced deposition of platinum from a precursor gas of (C/sub 5/H/sub 4/)CH/sub 3/Pt(CH/sub 3/)/sub 3/ has been demonstrated in recent years. In this paper, the resistivity and composition of the deposited metal film induced by FIB and the deposition rate have been measured as a function of ion current density. The resistivity and the content of the carbon impurity are reduced as the ion current increases while the deposition rate and the content of platinum and gallium increases respectively.