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1990 IEEE SOS/SOI Technology Conference. Proceedings最新文献

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Significant improvement in characteristics of SOS/MOSFETs by CW-Ar laser-recrystallization CW-Ar激光再结晶对SOS/ mosfet特性的显著改善
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145747
K. Sukegawa, H. Matsuoka, T. Sasaki, K. Park, S. Kawamura, M. Nakano
{"title":"Significant improvement in characteristics of SOS/MOSFETs by CW-Ar laser-recrystallization","authors":"K. Sukegawa, H. Matsuoka, T. Sasaki, K. Park, S. Kawamura, M. Nakano","doi":"10.1109/SOSSOI.1990.145747","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145747","url":null,"abstract":"Generally in SOS (silicon on sapphire) films, the density of Si defects such as twins and stacking faults is quite high, especially near the Si/sapphire interface, mainly due to the lattice mismatch between Si and sapphire. This leads to inferior electrical properties compared to their bulk counterparts. Although it has been reported that the characteristics of SOS devices can be improved by a pulse laser irradiation, the quality of laser-irradiated SOS films has not been investigated in detail. It is demonstrated that the SOS films have been significantly improved by CW-Ar laser recrystallization, resulting in almost defect-free SOS films. The defect-free SOS films reduce back-channel leakage currents in both n- and p-MOSFETs, while at the same time improving carrier mobilities by 30-50%.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134214803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Noise overshoot at drain current kink in SOI MOSFET SOI MOSFET漏极电流扭结处的噪声超调
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145699
J. Chen, P. Fang, P. Ko, C. Hu, R. Solomon, T. Chan, C. Sodini
{"title":"Noise overshoot at drain current kink in SOI MOSFET","authors":"J. Chen, P. Fang, P. Ko, C. Hu, R. Solomon, T. Chan, C. Sodini","doi":"10.1109/SOSSOI.1990.145699","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145699","url":null,"abstract":"The bias dependence of the drain current noise power of SOI (silicon-on-insulator) MOSFETs was studied, and low frequency noise overshoot at the drain current was observed. The overshoot has a width of about 0.7 V and exhibits a peak noise power which is two orders of magnitude higher than the normal noise level. The SOI devices used in this study were N-channel polysilicon gate MOSFETs on SIMOX (separation by implantation of oxygen) wafers fabricated with conventional submicron CMOS technology. The SOI film thickness, the buried-oxide thickness, and the gate oxide are 100 nm, 300 nm, and 11.5 nm, respectively. A computer-controlled test system was used to conduct the I-V and noise measurement automatically. A model explaining the occurrence of the noise overshoot and the noise peak is proposed.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"307 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116405646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Completely dielectrically isolated silicon for high voltage application produced by ZMR of poly Si on SiO/sub 2/ 用SiO/sub / 2/上多晶硅的ZMR法制备的高压用完全介质隔离硅
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145740
B. Tillack, R. Banisch, H. Richter, K. Hoeppner, O. Joachim, J. Knopke, U. Retzlaf
{"title":"Completely dielectrically isolated silicon for high voltage application produced by ZMR of poly Si on SiO/sub 2/","authors":"B. Tillack, R. Banisch, H. Richter, K. Hoeppner, O. Joachim, J. Knopke, U. Retzlaf","doi":"10.1109/SOSSOI.1990.145740","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145740","url":null,"abstract":"The aim is to demonstrate that it is possible to create completely dielectrically isolated Si using the zone-melted recrystallization (ZMR) technique and that the material quality allows application to high-voltage devices. In the first case the seeding windows were etched into the thermal oxide in the area between the tub-shaped grooves. Polycrystalline silicon films of different thicknesses (up to 80 mu m) were deposited. In the second case a thin polycrystalline silicon film (1 mu m) acts as a connection between the single-crystalline substrate and poly-Si in the grooves. The seeding recrystallization results in single-crystalline silicon","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123812880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sensitivity of ellipsometric modeling to the 'islands' of silicon precipitates at the bottom of the buried oxide layer in annealed SIMOX 椭圆偏振模型对退火SIMOX中埋藏氧化层底部硅沉淀“岛”的灵敏度
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145715
D. Chandler-Horowitz, J. Marchiando, M. Doss, S. Krause, S. Visitserngtrakul
{"title":"Sensitivity of ellipsometric modeling to the 'islands' of silicon precipitates at the bottom of the buried oxide layer in annealed SIMOX","authors":"D. Chandler-Horowitz, J. Marchiando, M. Doss, S. Krause, S. Visitserngtrakul","doi":"10.1109/SOSSOI.1990.145715","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145715","url":null,"abstract":"Spectroscopic ellipsometry as a nondestructive probe for multilayer SIMOX materials is considered. TEM micrographs of high flux single implant SIMOX annealed at 1300 degrees C for 6 h show islands of silicon precipitates near the bottom of the buried oxide layer. Spectroscopic ellipsometric measurements were performed on these samples at various implant doses and beam current densities to observe how the measured data fit the data theoretically predicted for various models of SIMOX that lead to the presence of these islands. Three distinct models of increasing complexity were used in the analysis: a 3-layer model having a silicon dioxide cap layer, upper silicon layer, and buried or implanted silicon dioxide layer; 4-layer model in which a new layer between the silicon substrate and buried silicon dioxide was added where the islands exist; and a 5-layer model that raised the island layer off the top of the substrate by adding a thin pure silicon dioxide layer above the substrate.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120964055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Limitations to fully-depleted SOI structures 完全耗尽SOI结构的限制
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145729
R. Lawrence, G. Campisi, G.J. Shontz, G. Pollack, R. Sundaresan
{"title":"Limitations to fully-depleted SOI structures","authors":"R. Lawrence, G. Campisi, G.J. Shontz, G. Pollack, R. Sundaresan","doi":"10.1109/SOSSOI.1990.145729","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145729","url":null,"abstract":"The authors demonstrate the mobility and threshold voltage behavior for fully depleted transistors of various geometries on various epitaxial silicon thicknesses. Electrical characterization techniques were used to examine fully depleted SIMOX SOI front- and back-gate transistors of gate geometries between 0.6 and 3 mu m on epitaxial silicon of thicknesses between 150 and 300 nm. Degradation in N-channel mobilities and threshold voltages was observed for short channel lengths and decreasing epitaxial silicon thickness. The decrease in mobility was attributed to the higher electric fields for small geometries. SOI is better than bulk, and fully depleted SOI is better than non-fully depleted SOI. Ultra thin SOI, synonymous with fully depleted, uses narrow gates, and thus the problem of degradation in mobility will be observed. Fully depleted SOI mitigates but does not remove the field dependence of mobility.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129055002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fast turn characterization of SIMOX wafers SIMOX晶圆的快速转动特性
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145710
S.T. Liu, P. Fechner, R. L. Roisen
{"title":"Fast turn characterization of SIMOX wafers","authors":"S.T. Liu, P. Fechner, R. L. Roisen","doi":"10.1109/SOSSOI.1990.145710","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145710","url":null,"abstract":"Physical and electrical properties of incoming low-defect SIMOX SOI wafers were characterized by fast turn techniques to determine their suitability for device applications. Physical properties were evaluated extensively with optical reflectometry and cross-sectional transmission electron microscopy. To facilitate evaluation of the back channel property with minimal processing. Schottky barrier MOS and simple regular MOS test structures were made. Schottky barrier behavior was noted in the characteristics near the origin and the conduction at zero gate bias. Back channel properties were evaluated first, and then the device was subjected to irradiation using a 10-keV ARACOR/4100 X-ray source with doses in the Mrad (SiO/sub 2/) region. The threshold voltage shift and the subthreshold voltage swing were measured. The radiation induced interface states in the Mrad (SiO/sub 2/) region were determined.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132465705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Substrate floating effects of p-channel SOI MOSFETs p沟道SOI mosfet的衬底浮动效应
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145722
Jong-Sun Lyu, S.-W. Kang, C. Lee
{"title":"Substrate floating effects of p-channel SOI MOSFETs","authors":"Jong-Sun Lyu, S.-W. Kang, C. Lee","doi":"10.1109/SOSSOI.1990.145722","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145722","url":null,"abstract":"The floating substrate effects of p-channel MOSFETs fabricated on SOI substrates formed by oxygen implantation are studied. The kink effect occurs in the saturation regime for p-channel SOI MOSFETs when electrons are generated by impact ionization near the drain and swept by the electric field into the neutral floating substrate. This lowers substrate potential and thus changes the threshold voltage through the back-bias effect. Generally, the p-channel SOI MOSFET has lower impact ionization than its n-channel counterpart. However, as the channel doping density increases and/or the channel length becomes shorter, more impact ionization occurs. Therefore, optimal conditions in device parameters must be chosen to realize VLSI SOI CMOS circuits.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132972879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dopant redistribution and activation in thin film SOI/SIMOX substrates 薄膜SOI/SIMOX衬底中掺杂剂的再分配和活化
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145714
A. K. Robinson, U. Bussmann, P. Hemment, V. Sharma, J. Kilner
{"title":"Dopant redistribution and activation in thin film SOI/SIMOX substrates","authors":"A. K. Robinson, U. Bussmann, P. Hemment, V. Sharma, J. Kilner","doi":"10.1109/SOSSOI.1990.145714","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145714","url":null,"abstract":"Experiments were performed to determine the transport properties, electrical activity, and redistribution of dopants implanted into SIMOX samples with different silicon layer thicknesses. High temperature annealed SIMOX samples with silicon film thicknesses of 2000 AA (SIMOX1) and 3000 AA (SIMOX2) were implanted with As/sup +/, Sb/sup +/, B/sup +/, and P/sup +/ ions. Activation of the dopant was achieved by annealing samples at either 950 degrees C or 1150 degrees C in flowing nitrogen gas in a resistivity heated furnace. Temperature dependence of the sheet resistance following As/sup +/ ion implantation into the same set of samples is presented. The main difference is seen above 800 degrees C when significant As diffusion occurs, which leads to uniform doping in the silicon layer and a value of sheet resistance which is temperature independent above 1000 degrees C.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134189182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of low energy SIMOX (LES) structures 低能SIMOX (LES)结构的表征
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145704
F. Namavar, E. Cortesi, N. Kalkhoran, J. Manke, B. Buchanan
{"title":"Characterization of low energy SIMOX (LES) structures","authors":"F. Namavar, E. Cortesi, N. Kalkhoran, J. Manke, B. Buchanan","doi":"10.1109/SOSSOI.1990.145704","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145704","url":null,"abstract":"Formation of ultra-thin SOI material using the SIMOX process is addressed. Research has been carried out to determine the effect of total dose, dose step, dose rate, implantation temperature, and energy on the formation of ultra-thin SIMOX material. Attempts were made to determine the lowest energy possible for the implantation of oxygen which results in the formation of high quality, thin SIMOX material. All samples were annealed at 1300 degrees C for 6 h in N/sub 2/ and analyzed using a variety of techniques, including TEM. The electrical properties of the LES samples were characterized and compared with those of standard SIMOX samples. An empirical curve of voltage breakdown versus oxide thickness for both LES and standard SIMOX samples was developed. The results show the formation of high quality SOI structures by oxygen implantation at 20-80 keV.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116189264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low frequency noise spectroscopy in thin SIMOX MOS transistors 薄SIMOX MOS晶体管的低频噪声光谱
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145730
T. Elewa, B. Boukriss, A. Chovet, S. Cristoloveanu
{"title":"Low frequency noise spectroscopy in thin SIMOX MOS transistors","authors":"T. Elewa, B. Boukriss, A. Chovet, S. Cristoloveanu","doi":"10.1109/SOSSOI.1990.145730","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145730","url":null,"abstract":"The analysis of the low-frequency noise in SOI MOSFETs is addressed. A simple model is presented which takes into consideration the parallel combination of three sources of noise, associated respectively with the two interfaces and the SI film volume. This model is also convenient for the analysis of depletion-mode SOI transistors. The original point in partially-depleted N N/sup +/ N MOSFETs is that the noise contribution of the volume can be isolated by inverting the two interfaces. This model allowed the characterization of various types of SIMOX substrates fabricated by varying the implantation and annealing conditions.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122834556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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