Dopant redistribution and activation in thin film SOI/SIMOX substrates

Abstract

Experiments were performed to determine the transport properties, electrical activity, and redistribution of dopants implanted into SIMOX samples with different silicon layer thicknesses. High temperature annealed SIMOX samples with silicon film thicknesses of 2000 AA (SIMOX1) and 3000 AA (SIMOX2) were implanted with As/sup +/, Sb/sup +/, B/sup +/, and P/sup +/ ions. Activation of the dopant was achieved by annealing samples at either 950 degrees C or 1150 degrees C in flowing nitrogen gas in a resistivity heated furnace. Temperature dependence of the sheet resistance following As/sup +/ ion implantation into the same set of samples is presented. The main difference is seen above 800 degrees C when significant As diffusion occurs, which leads to uniform doping in the silicon layer and a value of sheet resistance which is temperature independent above 1000 degrees C.<>