A. K. Robinson, U. Bussmann, P. Hemment, V. Sharma, J. Kilner
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引用次数: 0
摘要
通过实验确定了注入不同硅层厚度的SIMOX样品中的掺杂剂的输运性质、电活动和再分布。将硅膜厚度分别为2000 AA (SIMOX1)和3000 AA (SIMOX2)的高温退火SIMOX样品注入As/sup +/、Sb/sup +/、B/sup +/和P/sup +/离子。通过在电阻率加热炉中流动的氮气中在950℃或1150℃下退火样品来实现掺杂剂的活化。研究了在同一组样品中注入As/sup +/离子后，薄片电阻的温度依赖性。当显著的As扩散发生时，在800℃以上可以看到主要的差异，这导致硅层中均匀掺杂，并且片电阻值在1000℃以上与温度无关。
Dopant redistribution and activation in thin film SOI/SIMOX substrates
Experiments were performed to determine the transport properties, electrical activity, and redistribution of dopants implanted into SIMOX samples with different silicon layer thicknesses. High temperature annealed SIMOX samples with silicon film thicknesses of 2000 AA (SIMOX1) and 3000 AA (SIMOX2) were implanted with As/sup +/, Sb/sup +/, B/sup +/, and P/sup +/ ions. Activation of the dopant was achieved by annealing samples at either 950 degrees C or 1150 degrees C in flowing nitrogen gas in a resistivity heated furnace. Temperature dependence of the sheet resistance following As/sup +/ ion implantation into the same set of samples is presented. The main difference is seen above 800 degrees C when significant As diffusion occurs, which leads to uniform doping in the silicon layer and a value of sheet resistance which is temperature independent above 1000 degrees C.<>
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