Analysis and control of BJT latch in fully depleted floating-body submicron SOI MOSFETs

Abstract

The floating-body bipolar junction transistor (BJT) effects in fully depleted 0.5- mu m n-channel SOI (silicon on insulator) MOSFETs are analyzed, based on two-dimensional device simulations and on device measurements. PISCES simulations of the BJT-induced breakdown and latch phenomena are done, and parametric dependences are examined to give physical insight for optimal design. The analysis further relates the DC-breakdown and latch mechanisms in the fully depleted SOI MOSFET to the actual BJT-induced problems in an operating SOI CMOS circuit. A comprehensive understanding of floating-body effects is attained.<>