T. Elewa, B. Boukriss, A. Chovet, S. Cristoloveanu
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引用次数: 2
摘要
对SOI mosfet中的低频噪声进行了分析。提出了一个简单的模型，该模型考虑了三个噪声源的并行组合，分别与两个界面和SI薄膜体积相关联。该模型也便于对耗尽型SOI晶体管进行分析。在部分耗尽的N/ N/sup +/ N mosfet中，原始点是体积的噪声贡献可以通过反转两个接口来隔离。该模型允许通过改变注入和退火条件来表征各种类型的SIMOX衬底。
Low frequency noise spectroscopy in thin SIMOX MOS transistors
The analysis of the low-frequency noise in SOI MOSFETs is addressed. A simple model is presented which takes into consideration the parallel combination of three sources of noise, associated respectively with the two interfaces and the SI film volume. This model is also convenient for the analysis of depletion-mode SOI transistors. The original point in partially-depleted N N/sup +/ N MOSFETs is that the noise contribution of the volume can be isolated by inverting the two interfaces. This model allowed the characterization of various types of SIMOX substrates fabricated by varying the implantation and annealing conditions.<>
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