IEEE International Electron Devices Meeting 2003最新文献_第3页

Robust porous MSQ (k=2.3, e=12 GPa) for low-temperature (<350/spl deg/C) Cu/low-k integration using ArF resist mask process 低温(<350/spl℃)Cu/low-k集成使用ArF抗蚀剂掩膜工艺坚固的多孔MSQ (k=2.3, e=12 GPa)

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269414

N. Ohashi, K. Misawa, S. Sone, H.J. Shin, K. Inukai, E. Soda, S. Kondo, A. Furuya, H. Okamura, S. Ogawa, N. Kobayashi

引用次数: 0

Reemergence of the surface-potential-based compact MOSFET models 基于表面电位的紧凑MOSFET模型的重新出现

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269415

G. Gildenblat, X. Cai, T. Chen, X. Gu, H. Wang

引用次数: 14

New method for temperature-dependent thermal resistance and capacitance accurate extraction in high-voltage DMOS transistors 高压DMOS晶体管温度相关热阻和电容精确提取的新方法

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269183

C. Anghel, N. Hefyene, Renaud Gillon, M. Tack, Michel Declercq, Adrian M. Ionescu

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引用次数: 16

ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability ALD HfO/sub 2/使用重水(D/sub 2/O)提高MOSFET稳定性

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269171

H. Tseng, M. Ramón, L. Hebert, P. Tobin, D. Triyoso, J. Grant, Z.X. Jiang, D. Roan, S. Samavedam, D. Gilmer, S. Kalpat, C. Hobbs, W. Taylor, O. Adetutu, B. White

引用次数: 8

MRAM with lamellar structure as free layer 自由层为片层结构的MRAM

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269408

I. Baek, J. Lee, H. Kim, Y. Ha, J. Bae, S.C. Oh, S.O. Park, U. Chung, N. Lee, H. Kang, J. Moon

引用次数: 1

High speed and nonvolatile Si nanocrystal memory for scaled flash technology using highly field-sensitive tunnel barrier 高速和非易失性硅纳米晶存储器，用于高场敏感隧道势垒的缩放闪存技术

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269341

Seungjae Baik, Siyoung Choi, U. Chung, J. Moon

引用次数: 15

Scaled 2bit/cell SONOS type nonvolatile memory technology for sub-90nm embedded application using SiN sidewall trapping structure 采用SiN侧壁捕获结构，用于90纳米以下嵌入式应用的缩放2bit/cell SONOS型非易失性存储技术

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269426

M. Fukuda, T. Nakanishi, Y. Nara

引用次数: 11

Fully silicided NiSi and germanided NiGe dual gates on SiO/sub 2//Si and Al/sub 2/O/sub 3//Ge-on-insulator MOSFETs 全硅化NiSi和锗化nge双栅SiO/sub 2//Si和Al/sub 2/O/sub 3//Ge-on-insulator mosfet

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269289

C. Huang, D. S. Yu, A. Chin, C. Wu, W. Chen, Chunxiang Zhu, M. Li, B. Cho, D. Kwong

引用次数: 29

Investigation of scaling methodology for strained Si n-MOSFETs using a calibrated transport model 利用校准输运模型研究应变Si - n- mosfet的标度方法

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269325

H. Nayfeh, J. Hoyt, D. Antoniadis

引用次数: 8

Device properties in 90 nm and beyond and implications on circuit design 90纳米及以上的器件特性及其对电路设计的影响

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI: 10.1109/IEDM.2003.1269162

C. H. Diaz, K. Fung, S.M. Cheng, K. Cheng, S.W. Wang, H. Huang, Y. Leung, M. Tsai, C.C. Wu, C.C. Lin, Mi-Chang Chang, D. Tang

引用次数: 5