I. Baek, J. Lee, H. Kim, Y. Ha, J. Bae, S.C. Oh, S.O. Park, U. Chung, N. Lee, H. Kang, J. Moon
{"title":"自由层为片层结构的MRAM","authors":"I. Baek, J. Lee, H. Kim, Y. Ha, J. Bae, S.C. Oh, S.O. Park, U. Chung, N. Lee, H. Kang, J. Moon","doi":"10.1109/IEDM.2003.1269408","DOIUrl":null,"url":null,"abstract":"The key factors to improve the switching characteristics are systematically analyzed to develop high density MRAM with a reliable operating margin. We demonstrated that roughness control of MTJ films, choice of free layer materials with small Ms, and optimized cell shape can effectively suppress the switching distribution. As a novel free layer scheme, a lamellar structure is proposed and found to improve the switching characteristics by suppressing the grain growth in the ferromagnetic layer.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"MRAM with lamellar structure as free layer\",\"authors\":\"I. Baek, J. Lee, H. Kim, Y. Ha, J. Bae, S.C. Oh, S.O. Park, U. Chung, N. Lee, H. Kang, J. Moon\",\"doi\":\"10.1109/IEDM.2003.1269408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The key factors to improve the switching characteristics are systematically analyzed to develop high density MRAM with a reliable operating margin. We demonstrated that roughness control of MTJ films, choice of free layer materials with small Ms, and optimized cell shape can effectively suppress the switching distribution. As a novel free layer scheme, a lamellar structure is proposed and found to improve the switching characteristics by suppressing the grain growth in the ferromagnetic layer.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The key factors to improve the switching characteristics are systematically analyzed to develop high density MRAM with a reliable operating margin. We demonstrated that roughness control of MTJ films, choice of free layer materials with small Ms, and optimized cell shape can effectively suppress the switching distribution. As a novel free layer scheme, a lamellar structure is proposed and found to improve the switching characteristics by suppressing the grain growth in the ferromagnetic layer.
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