基于表面电位的紧凑MOSFET模型的重新出现

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269415

G. Gildenblat, X. Cai, T. Chen, X. Gu, H. Wang

{"title":"基于表面电位的紧凑MOSFET模型的重新出现","authors":"G. Gildenblat, X. Cai, T. Chen, X. Gu, H. Wang","doi":"10.1109/IEDM.2003.1269415","DOIUrl":null,"url":null,"abstract":"This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (/spl phi//sub s/) approximation.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Reemergence of the surface-potential-based compact MOSFET models\",\"authors\":\"G. Gildenblat, X. Cai, T. Chen, X. Gu, H. Wang\",\"doi\":\"10.1109/IEDM.2003.1269415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (/spl phi//sub s/) approximation.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

本文解决了紧凑MOSFET建模中的当前问题，提供了SP(宾夕法尼亚州立大学开发的一种新型紧凑MOSFET模型)的概述和一些基本细节，并介绍了对称线性化方法和流线型表面电位(/spl phi//sub s/)近似的新应用的原始结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reemergence of the surface-potential-based compact MOSFET models

This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (/spl phi//sub s/) approximation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE International Electron Devices Meeting 2003

自引率

0.00%

发文量