MRAM with lamellar structure as free layer

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269408

I. Baek, J. Lee, H. Kim, Y. Ha, J. Bae, S.C. Oh, S.O. Park, U. Chung, N. Lee, H. Kang, J. Moon

引用次数: 1

Abstract

The key factors to improve the switching characteristics are systematically analyzed to develop high density MRAM with a reliable operating margin. We demonstrated that roughness control of MTJ films, choice of free layer materials with small Ms, and optimized cell shape can effectively suppress the switching distribution. As a novel free layer scheme, a lamellar structure is proposed and found to improve the switching characteristics by suppressing the grain growth in the ferromagnetic layer.

查看原文本刊更多论文

自由层为片层结构的MRAM

系统分析了提高开关特性的关键因素，以开发具有可靠工作裕度的高密度MRAM。研究表明，控制MTJ薄膜的粗糙度、选择具有小Ms的自由层材料以及优化电池形状可以有效地抑制开关分布。作为一种新颖的自由层方案，提出并发现了一种层状结构，通过抑制铁磁层中的晶粒生长来改善开关特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE International Electron Devices Meeting 2003

自引率

0.00%

发文量