{"title":"High reliability non-flow underfill material with filler loading","authors":"S. Katsurayama, Y. Sakamoto","doi":"10.1109/IEMT.2002.1032728","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032728","url":null,"abstract":"The non-flow underfill (NUF) process is an important technology that can be used to reduce the cost of flip chip package assembly. NUF reduces the oxide layer on metal (e.g. bump or pad) and encapsulates the package during bump connection processes such as the reflow process. Generally, in order to achieve higher reliability, filler must be formulated into the underfill material. In the case of NUF, it is difficult to load filler because the filler might become sandwiched between the bump and the substrate, hindering connection. However, we have developed a new NUF system which can connect between bump and substrate according to optimize fine filler distribution and wettability of material, even with much higher filler content formulation. In this paper, we will outline this new filler loaded NUF system, which offers higher connection reliability and thermal cycle reliability.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115729250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Gold stud bump in flip-chip applications","authors":"J. Jordan","doi":"10.1109/IEMT.2002.1032735","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032735","url":null,"abstract":"As power requirements and operating frequencies increase, more and more designs will look toward ball bumps as an interconnect solution. While solder has traditionally been the incumbent material for these bumps, solder's limitations have become manufacturing and performance limitations. As a result, packaging designers are looking toward gold bumps as a strong contender in the first-level interconnect battle. This paper briefly discusses the limitations of the solder connection process and compares that to the gold bump process. Furthermore, it describes the four leading alternatives for achieving gold bump flip-chip connections.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116954743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Encapsulation of 1-Up fpBGA from design to production","authors":"H. Sze, R. Tsang, Y. Jaramillo","doi":"10.1109/IEMT.2002.1032748","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032748","url":null,"abstract":"The plastic near chip scale ball grid array (fpBGA) package has already begun to take over certain segments of the surface mount technology (SMT) industry, and its hold on the market is expected to continue growing over the next few years. A fpBGA in general, offers a smaller footprint than a QFP package with similar pin count. In addition, fpBGA significantly reduces the risk of component handling damage, reduces power supply noise and offers the same or better performance than leaded packages. With the ever-increasing demand for high density, high I/O count packaging, fpBGA is fast becoming the next generation package. fpBGA package is a method of reducing package size and its pin-to-pin trace gap in order to integrate more functions and reliability in a single space. Conventional encapsulation methodology for fpBGA is by panel molding, normally into multiple (4 or 5) sections. This reduces the substrate material utilization. In this paper design methodology and package reliability for a 1-up (I section) fpBGA will be presented. Reliability consideration includes JEDEC package reliability standard. Package reliability data will be discussed. Package co-planarity data will be compared. The encapsulation results to be discussed will include EMC selection criteria, PMC techniques to control warpage, and the cause of kinked wire and its control methodology.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127208911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Managing test complexity through a comprehensive design-to-test strategy","authors":"M. Kondrat","doi":"10.1109/IEMT.2002.1032779","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032779","url":null,"abstract":"Advances in design capabilities and process technologies enable semiconductor manufacturers to create increasingly sophisticated, high-speed integrated circuits with test requirements that seriously challenge traditional test methods and manufacturers' ability to achieve high volume, cost-effective production. To cope with increased test complexity, alternative approaches have largely focused in isolation on design-centric or production-centric tactics, relying in some cases on design-for-test (DFT) methods and in other cases on more powerful automatic test equipment (ATE). Yet approaches to test based solely on such tactics have already fallen behind advances in design and manufacturing, exposing IC manufacturers to the real possibility of creating advanced ICs that cannot be tested within reasonable limits of time or cost. In contrast, a more effective approach targets growing test complexity through a broader strategy that spans product development to facilitate the critical transition from design to production test. At the heart of this strategic approach, test development tools operate within existing design flows, smoothing the traditional barriers between design and test. As a result, logic designers are able to build more testable ICs, and test engineers are able to write more effective test programs. This paper discusses the challenges limiting traditional test methods; describes the requirements for more effective solutions based on a comprehensive design-to-test strategy; and discusses critical technologies needed to deploy effective design-to-test methods required to manage emerging test requirements.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123665971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Laser processing - the future of HDI manufacturing","authors":"S. Venkat, T. Hannon","doi":"10.1109/IEMT.2002.1032742","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032742","url":null,"abstract":"Conventional electronics manufacturing technologies have become unsuitable for high density interconnect structures (HDIS) due to processing limitations, lower manufacturing yields, higher production costs and limited flexibility. Laser processing is one suitable solution for manufacturing HDIS. This is supported by published reports that over 90% of all microvias in HDI PWBs and chip package substrates are formed using laser technology (D.F. Downey et al, 1993). Lasers are ideal primarily due to their high-resolution processing capabilities, fast processing speeds, reliability, versatility and lower cost-of-ownership. Focusing on these factors, this paper highlights key developments in laser processing which are relevant for advancing HDI technology. Particular emphasis is placed on new developments in CO/sub 2/, UV and diode-pumped solid-state laser processing for improved HDI fabrication. Laser performance characteristics, including optimal selection of key process parameters for improved HDI fabrication, and cost-of-ownership models are presented for each laser technology. After discussing the benefits of using existing laser technologies for HDI manufacturing, this paper provides an insight into emerging laser technologies, which are currently under development and driven by the electronics industry. A preview of these technologies and the potential capabilities for the electronics manufacturing industry are presented.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122551654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reliability testing of single diffused planar InP/InGaAs avalanche photodiodes","authors":"Jihoun Jung, Yong-Hwan Kwon, K. Hyun, I. Yun","doi":"10.1109/IEMT.2002.1032752","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032752","url":null,"abstract":"This paper presents the reliability of single diffused planar InP/InGaAs avalanche photodiodes (APDs), which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APDs and bias-temperature tests to evaluate long-term reliability at temperature from 200 to 250/spl deg/C. The reliability is examined by accelerated life tests for monitoring dark current and breakdown voltage. The lifetime of the APDs is estimated by degradation activation energy. Based on the test results, it is concluded that the single diffused planar InP/InGaAs APDs show sufficient reliability for practical 10-Gb/s optical receivers.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124100096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High density photolithographic Advanprobe/spl trade/ technology","authors":"D. Yu, Yu Zhou, B. Aldaz, K. Lee","doi":"10.1109/IEMT.2002.1032791","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032791","url":null,"abstract":"Wafer level probing trends push high speed and high parallelism to reduce test cost and improve productivity. This in turn challenges design and fabrication technology for probecard manufacturing. New technology and the incorporation of new fabrication processes are intuitive approaches to tackling these challenges. Photolithographic MEMS (micro-electrical-mechanical-system) technologies and micro-machining techniques offer numerous, innovative applications in probecard manufacturing. By adopting photolithographic technology, Advantest has developed its Advanprobe/spl trade/ technology for high parallelism, at-speed wafer level probing. The PhotoFinger/spl trade/ probecard is a product within the Advanprobe/spl trade/ technology series. Introduction to the PhotoFinger/spl trade/ probecard's system level design, the structure and mechanical performance, as well as the electrical characteristic are offered in this article.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121944444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Elimination of polyimide stress buffer on integrated circuits using advanced packaging materials","authors":"D. Patten, Jesse Phou","doi":"10.1109/IEMT.2002.1032753","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032753","url":null,"abstract":"Polyimide is typically used as the final layer in silicon technology process integration. Its primary purpose is to protect the topside structures and relieve the interface of stresses introduced during and after encapsulation. However, developments in mold compound technology as well as in wafer fabrication techniques have caused the industry to re-evaluate the need for a polyimide stress buffer. Mold compound fillers have become finer and more spherical, reducing particulate pressure loading from the fillers on the die top surface. Additionally, the use of CMP in wafer fabrication reduces topographical variations, which result in less stress points on the die surface., This paper presents the evaluations that were conducted to assess the continued use of polyimide, and the effort made to eliminate if from some microelectronic packages. Moisture characterization data for several MAPBGA packages are included and package performance without polyimide is assessed. It was concluded that the removal of polyimide from these devices does not significantly affect the yields, but more work needs to be done to realize the limitations.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130764931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Novel techniques for wideband RF test","authors":"J. Lukez","doi":"10.1109/IEMT.2002.1032793","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032793","url":null,"abstract":"Wireless communication systems continue to progress to wideband modulation formats. In particular, third generation (3G) wireless and wireless local area networks (WLAN) present extraordinary increases in channel bandwidth. As a result, designers are confronted with a greater divergence between the sinusoidal and modulated stimulus responses of a device. Traditional S-Parameter measurement techniques utilize narrowband, sinusoidal stimulus signals, resulting in the incomplete characterization of active devices. Modulated Vector Network Analysis (MVNA/spl trade/) allows S-Parameter measurements to be performed with complex modulated signals, resulting in truer device characterization. This paper presents a technique allowing the measurement of S-Parameters with complex, modulated signals.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130859836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Houston, J. Bentley, B. Lewis, B.A. Smith, D. Baldwin
{"title":"Processing strategies for high speed 0201 implementation","authors":"P. Houston, J. Bentley, B. Lewis, B.A. Smith, D. Baldwin","doi":"10.1109/IEMT.2002.1032745","DOIUrl":"https://doi.org/10.1109/IEMT.2002.1032745","url":null,"abstract":"A lot of research has been done to determine the board design considerations for 0201 processing, but work also needs to be done to determine the process window. Initial data presented last year showed a number of significant factors in the printing, placement, and reflow processes. From that study, the individual process steps showed that certain design and manufacturing parameters can have a huge effect upon total process defects. Presented in this paper is the data from those studies as well as the data gathered after a large evaluation run in which many components were processed. Studied process parameters were broken out by individual process steps initially, and then studied over the entire process. Some of the process parameters that were examined were stencil manufacturing method, print force, print speed, and stencil wipe frequency for the printing process and reflow atmosphere, profile shape, and ramp rate for the reflow process. From these studies, a reliable process window was obtained for a high speed 0201 assembly process that was proven to provide a 17 DPM (defect per million) assembly yield.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133211184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}