{"title":"宽带射频测试新技术","authors":"J. Lukez","doi":"10.1109/IEMT.2002.1032793","DOIUrl":null,"url":null,"abstract":"Wireless communication systems continue to progress to wideband modulation formats. In particular, third generation (3G) wireless and wireless local area networks (WLAN) present extraordinary increases in channel bandwidth. As a result, designers are confronted with a greater divergence between the sinusoidal and modulated stimulus responses of a device. Traditional S-Parameter measurement techniques utilize narrowband, sinusoidal stimulus signals, resulting in the incomplete characterization of active devices. Modulated Vector Network Analysis (MVNA/spl trade/) allows S-Parameter measurements to be performed with complex modulated signals, resulting in truer device characterization. This paper presents a technique allowing the measurement of S-Parameters with complex, modulated signals.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Novel techniques for wideband RF test\",\"authors\":\"J. Lukez\",\"doi\":\"10.1109/IEMT.2002.1032793\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wireless communication systems continue to progress to wideband modulation formats. In particular, third generation (3G) wireless and wireless local area networks (WLAN) present extraordinary increases in channel bandwidth. As a result, designers are confronted with a greater divergence between the sinusoidal and modulated stimulus responses of a device. Traditional S-Parameter measurement techniques utilize narrowband, sinusoidal stimulus signals, resulting in the incomplete characterization of active devices. Modulated Vector Network Analysis (MVNA/spl trade/) allows S-Parameter measurements to be performed with complex modulated signals, resulting in truer device characterization. This paper presents a technique allowing the measurement of S-Parameters with complex, modulated signals.\",\"PeriodicalId\":340284,\"journal\":{\"name\":\"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.2002.1032793\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2002.1032793","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wireless communication systems continue to progress to wideband modulation formats. In particular, third generation (3G) wireless and wireless local area networks (WLAN) present extraordinary increases in channel bandwidth. As a result, designers are confronted with a greater divergence between the sinusoidal and modulated stimulus responses of a device. Traditional S-Parameter measurement techniques utilize narrowband, sinusoidal stimulus signals, resulting in the incomplete characterization of active devices. Modulated Vector Network Analysis (MVNA/spl trade/) allows S-Parameter measurements to be performed with complex modulated signals, resulting in truer device characterization. This paper presents a technique allowing the measurement of S-Parameters with complex, modulated signals.