单扩散平面InP/InGaAs雪崩光电二极管可靠性测试

27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium Pub Date : 2002-11-07 DOI:10.1109/IEMT.2002.1032752

Jihoun Jung, Yong-Hwan Kwon, K. Hyun, I. Yun

{"title":"单扩散平面InP/InGaAs雪崩光电二极管可靠性测试","authors":"Jihoun Jung, Yong-Hwan Kwon, K. Hyun, I. Yun","doi":"10.1109/IEMT.2002.1032752","DOIUrl":null,"url":null,"abstract":"This paper presents the reliability of single diffused planar InP/InGaAs avalanche photodiodes (APDs), which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APDs and bias-temperature tests to evaluate long-term reliability at temperature from 200 to 250/spl deg/C. The reliability is examined by accelerated life tests for monitoring dark current and breakdown voltage. The lifetime of the APDs is estimated by degradation activation energy. Based on the test results, it is concluded that the single diffused planar InP/InGaAs APDs show sufficient reliability for practical 10-Gb/s optical receivers.","PeriodicalId":340284,"journal":{"name":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reliability testing of single diffused planar InP/InGaAs avalanche photodiodes\",\"authors\":\"Jihoun Jung, Yong-Hwan Kwon, K. Hyun, I. Yun\",\"doi\":\"10.1109/IEMT.2002.1032752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the reliability of single diffused planar InP/InGaAs avalanche photodiodes (APDs), which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APDs and bias-temperature tests to evaluate long-term reliability at temperature from 200 to 250/spl deg/C. The reliability is examined by accelerated life tests for monitoring dark current and breakdown voltage. The lifetime of the APDs is estimated by degradation activation energy. Based on the test results, it is concluded that the single diffused planar InP/InGaAs APDs show sufficient reliability for practical 10-Gb/s optical receivers.\",\"PeriodicalId\":340284,\"journal\":{\"name\":\"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.2002.1032752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2002.1032752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了单漫射平面InP/InGaAs雪崩光电二极管(apd)的可靠性，这对10gb /s光接收机的商用应用至关重要。用于平面InP/InGaAs apd和偏置温度测试的通用设计，可在200至250/spl℃的温度下评估长期可靠性。通过监测暗电流和击穿电压的加速寿命试验来检验其可靠性。通过降解活化能估计apd的寿命。测试结果表明，单扩散平面InP/InGaAs apd在实际的10gb /s光接收机中具有足够的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reliability testing of single diffused planar InP/InGaAs avalanche photodiodes

This paper presents the reliability of single diffused planar InP/InGaAs avalanche photodiodes (APDs), which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APDs and bias-temperature tests to evaluate long-term reliability at temperature from 200 to 250/spl deg/C. The reliability is examined by accelerated life tests for monitoring dark current and breakdown voltage. The lifetime of the APDs is estimated by degradation activation energy. Based on the test results, it is concluded that the single diffused planar InP/InGaAs APDs show sufficient reliability for practical 10-Gb/s optical receivers.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

27th Annual IEEE/SEMI International Electronics Manufacturing Technology Symposium

自引率

0.00%

发文量