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2007 International Symposium on Semiconductor Manufacturing最新文献

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Reduction of wafer edge induced defect by WEE optimization 用WEE优化方法减少晶圆边缘缺陷
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446900
Taiki Murata, Masayuki Sato, T. Goto
{"title":"Reduction of wafer edge induced defect by WEE optimization","authors":"Taiki Murata, Masayuki Sato, T. Goto","doi":"10.1109/ISSM.2007.4446900","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446900","url":null,"abstract":"In this paper, A unique defect caused by inter layer dielectric (ILD) film peeling from wafer edge is reported. The root cause analysis by using wafer edge/bevel inspection tool revealed that the source of the ILD film peeling is residual photoresist at wafer edge. Wafer edge exposure (WEE) condition was optimized to suppress the resist residue and consequent film peeling from wafer edge.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122210643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A statistical method for the characterization of bimodal electromigration distributions 表征双峰电迁移分布的统计方法
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446869
C. Hau-Riege, Eunjoo Lee, S. Thierbach, A. Marathe, R. Kittler
{"title":"A statistical method for the characterization of bimodal electromigration distributions","authors":"C. Hau-Riege, Eunjoo Lee, S. Thierbach, A. Marathe, R. Kittler","doi":"10.1109/ISSM.2007.4446869","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446869","url":null,"abstract":"We have developed a statistical method for analyzing bimodal electromigration distributions based on experiment and failure analysis. This method assesses whether a distribution is bimodal, and if so, determines the mode of each individual fail through a least-squares method, so that the best lognormal fit is determined for each mode. Once the modes have been separated, the electromigration performance for each mode can be explicitly determined in the usual manner. Unlike methods based on maximum likelihood estimation, this method is robust for small samples sizes, in which random subsets of a large dataset lead to statistically similar results. Further, since this method has been verified through failure analysis for multiple distributions, extensive failure analysis work can be bypassed in order to separate the entire distribution into two modes.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114165601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Using capacity as a competition strategy in a manufacturing duopoly 制造业双寡头垄断下的产能竞争策略
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446826
Y. Chou
{"title":"Using capacity as a competition strategy in a manufacturing duopoly","authors":"Y. Chou","doi":"10.1109/ISSM.2007.4446826","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446826","url":null,"abstract":"Capacity is a strategic factor of competition in asset-heavy industries. However, when demand is volatile, capacity expansion is hazardous to profits. In this paper, a game theory method is developed for analyzing whether capacity can be used as a competition strategy and for determining its sufficient conditions. We consider a manufacturing service duopoly of differentiated service prices and volatile demand. Sufficient conditions for Nash equilibrium of capacity expansion are derived for lognormal demand. Those conditions specify a choice space for the leader Arm to increase its own profit at the expense of the follower's profit by aggressively expanding its capacity.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116071485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved electrical performance for 65nm node and beyond through the integration of HARP O3/TEOS oxide films for STI, PMD, and thin film applications 通过集成用于STI、PMD和薄膜应用的HARP O3/TEOS氧化膜，提高了65nm及以上节点的电性能
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446861
Cary Ching, H. Whitesell, S. Venkataraman
{"title":"Improved electrical performance for 65nm node and beyond through the integration of HARP O3/TEOS oxide films for STI, PMD, and thin film applications","authors":"Cary Ching, H. Whitesell, S. Venkataraman","doi":"10.1109/ISSM.2007.4446861","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446861","url":null,"abstract":"In this paper, we discuss the HARPtrade (high aspect ratio process) 03/TEOS oxide film. A complete film property characterization is presented and a comparison with an HDP-CVD process is made. For 65 nm node and beyond, the HARP films can be used for multiple applications, including STI fill, PMD fill, and stress memorization.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115253871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Particle removal performance of 20nm rated filters for advanced wet chemical cleaning 20nm额定过滤器的颗粒去除性能，用于高级湿式化学清洗
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446893
M. Nose, S. Tsuzuki, T. Mizuno, T. Numaguchi
{"title":"Particle removal performance of 20nm rated filters for advanced wet chemical cleaning","authors":"M. Nose, S. Tsuzuki, T. Mizuno, T. Numaguchi","doi":"10.1109/ISSM.2007.4446893","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446893","url":null,"abstract":"The newest 20 nm rated PTFE Alter revealed better performance in both theoretical simulation of particle reduction rate in the bath and actual number of particles on wafers at a fab as compared to the conventional 30 nm ratied filter. As a result, optimally designed 20 nm rated filter is strongly recommended to use as recirculation filters in wet-benches for advanced semiconductor manufacturing process.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116681617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study of Time Variable Multiple Objectives scheduler for wafer fabrication 晶圆制造的时变多目标调度研究
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446813
Lee Yen-Fei, J. Zhibin, Zhang Huai, Ko Chen-Pin, M. Z. Darudin, Yi Deer
{"title":"A study of Time Variable Multiple Objectives scheduler for wafer fabrication","authors":"Lee Yen-Fei, J. Zhibin, Zhang Huai, Ko Chen-Pin, M. Z. Darudin, Yi Deer","doi":"10.1109/ISSM.2007.4446813","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446813","url":null,"abstract":"Wafer fabrication (Fab) is a typical large-scale complicated manufacturing system. With the enhancement of modern Fab's automation, one of important techniques is to determine lot priority index to meet multiple objectives. Usually different objectives may be paid diverse emphases which are represented by weights. In today's highly dynamic manufacturing environment, weights of each individual objective may change along with time, and corresponding scheduling may be regarded as the time-variable-multiple-objectives (TVMO) scheduling. The proposed TVMO algorithm presents a practical and useful way to find out trade-off between better optimality for computation, which is essential for real-time response to changes in Foundry fab.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125242194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of an automatic CD control system for Cu damascene etching 铜大马士革蚀刻自动CD控制系统的研制
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446832
H. Nambu, T. Akimoto
{"title":"Development of an automatic CD control system for Cu damascene etching","authors":"H. Nambu, T. Akimoto","doi":"10.1109/ISSM.2007.4446832","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446832","url":null,"abstract":"A CD control technique for Cu damascene interconnection manufacturing was studied. To achieve target wire capacity and resistance, it is required that the CD of trench is always constant. In this issue, we developed newly CD control technique, and furthermore, the advanced CD control system was released for 90 nm LSI manufacturing, and it was achieved that efficient and accurate CD control on mass production of System LSI.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132732896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Copy smart technology transfer 复制智能技术转让
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446824
D. Tucker, P. Fearon, M. Landry, J. Rock
{"title":"Copy smart technology transfer","authors":"D. Tucker, P. Fearon, M. Landry, J. Rock","doi":"10.1109/ISSM.2007.4446824","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446824","url":null,"abstract":"Transferring technologies among factories is a common practice. Numerous factors which drive this include: adding a second source, consolidating technologies, purchasing processes, and adding capacity for new processes. Transferring facilities can be company to company; site to site within a manufacturer; from old to new tool sets; small to larger wafer sizes and include other complicating scenarios. At National Semiconductor, recent transfers involved existing technologies among three fabrication sites. In this paper the evolved transfer process is reviewed along with a discussion of obstacles, methods to counter these issues and best practice techniques.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133137928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of PDA process to improve electrical characteristics of HfOxNy High-k dielectric formed by ECR plasma oxidation of HfN 改善HfN ECR等离子体氧化HfOxNy高k介电材料电学特性的PDA工艺研究
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446875
S. Ohmi, Y. Nakano
{"title":"Investigation of PDA process to improve electrical characteristics of HfOxNy High-k dielectric formed by ECR plasma oxidation of HfN","authors":"S. Ohmi, Y. Nakano","doi":"10.1109/ISSM.2007.4446875","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446875","url":null,"abstract":"In this paper, post deposition annealing (PDA) processes such as Si wafer covering rapid thermal annealing (SWC-RTA) and rapid cooling process were investigated to improve electrical characteristics of HfO<sub>x</sub>N<sub>y</sub> films formed by ECR Ar/O<sup>2</sup> plasma oxidation of ultra-thin HfN films. An EOT of 0.96 nm with leakage current density of 0.26 A/cm<sup>2</sup> was obtained by utilizing SWC-RTA and rapid cooling. The obtained result shows the smallest equivalent oxide thickness (EOT) for the HfO<sub>x</sub>N<sub>y</sub> film formed by ECR plasma process so far.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133585001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Plasma-assisted CD shrink and overlay metrology techniques for double patterning 等离子体辅助双图案CD收缩和覆盖计量技术
2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI: 10.1109/ISSM.2007.4446854
R. Sadjadi, H. Zhu, P. Cirigliano, E. Pavel, A. Athayde, C. Bozdog, M. Sendler, D. Mor
{"title":"Plasma-assisted CD shrink and overlay metrology techniques for double patterning","authors":"R. Sadjadi, H. Zhu, P. Cirigliano, E. Pavel, A. Athayde, C. Bozdog, M. Sendler, D. Mor","doi":"10.1109/ISSM.2007.4446854","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446854","url":null,"abstract":"Double patterning lithography is being considered for semiconductor manufacturing at the 32 nm technology node. In the double exposure approach, double patterning is accomplished with two cycles of lithography and etch. A tight overlay tolerance is required to prevent registration errors between the lithography steps from transferring as CD errors in the final pattern. Here we present a double patterning scheme with a novel plasma-assisted CD shrink technique to reduce the feature size after each lithography exposure, providing both pitch and CD shrink. Scatterometry-based metrology is shown to be able to detect registration errors down to 1 nm.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123446139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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