Reduction of wafer edge induced defect by WEE optimization

Abstract

In this paper, A unique defect caused by inter layer dielectric (ILD) film peeling from wafer edge is reported. The root cause analysis by using wafer edge/bevel inspection tool revealed that the source of the ILD film peeling is residual photoresist at wafer edge. Wafer edge exposure (WEE) condition was optimized to suppress the resist residue and consequent film peeling from wafer edge.