用WEE优化方法减少晶圆边缘缺陷

2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI:10.1109/ISSM.2007.4446900

Taiki Murata, Masayuki Sato, T. Goto

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引用次数: 1

摘要

本文报道了一种由层间介质(ILD)薄膜从晶圆边缘剥落引起的独特缺陷。利用晶圆边缘/斜角检测工具进行分析，发现ILD薄膜剥落的根本原因是晶圆边缘残留光刻胶。优化了硅片边缘曝光条件，抑制了硅片边缘的抗蚀剂残留和脱落。

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Reduction of wafer edge induced defect by WEE optimization

In this paper, A unique defect caused by inter layer dielectric (ILD) film peeling from wafer edge is reported. The root cause analysis by using wafer edge/bevel inspection tool revealed that the source of the ILD film peeling is residual photoresist at wafer edge. Wafer edge exposure (WEE) condition was optimized to suppress the resist residue and consequent film peeling from wafer edge.

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2007 International Symposium on Semiconductor Manufacturing

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