{"title":"改善HfN ECR等离子体氧化HfOxNy高k介电材料电学特性的PDA工艺研究","authors":"S. Ohmi, Y. Nakano","doi":"10.1109/ISSM.2007.4446875","DOIUrl":null,"url":null,"abstract":"In this paper, post deposition annealing (PDA) processes such as Si wafer covering rapid thermal annealing (SWC-RTA) and rapid cooling process were investigated to improve electrical characteristics of HfO<sub>x</sub>N<sub>y</sub> films formed by ECR Ar/O<sup>2</sup> plasma oxidation of ultra-thin HfN films. An EOT of 0.96 nm with leakage current density of 0.26 A/cm<sup>2</sup> was obtained by utilizing SWC-RTA and rapid cooling. The obtained result shows the smallest equivalent oxide thickness (EOT) for the HfO<sub>x</sub>N<sub>y</sub> film formed by ECR plasma process so far.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Investigation of PDA process to improve electrical characteristics of HfOxNy High-k dielectric formed by ECR plasma oxidation of HfN\",\"authors\":\"S. Ohmi, Y. Nakano\",\"doi\":\"10.1109/ISSM.2007.4446875\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, post deposition annealing (PDA) processes such as Si wafer covering rapid thermal annealing (SWC-RTA) and rapid cooling process were investigated to improve electrical characteristics of HfO<sub>x</sub>N<sub>y</sub> films formed by ECR Ar/O<sup>2</sup> plasma oxidation of ultra-thin HfN films. An EOT of 0.96 nm with leakage current density of 0.26 A/cm<sup>2</sup> was obtained by utilizing SWC-RTA and rapid cooling. The obtained result shows the smallest equivalent oxide thickness (EOT) for the HfO<sub>x</sub>N<sub>y</sub> film formed by ECR plasma process so far.\",\"PeriodicalId\":325607,\"journal\":{\"name\":\"2007 International Symposium on Semiconductor Manufacturing\",\"volume\":\"157 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Symposium on Semiconductor Manufacturing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2007.4446875\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on Semiconductor Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2007.4446875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of PDA process to improve electrical characteristics of HfOxNy High-k dielectric formed by ECR plasma oxidation of HfN
In this paper, post deposition annealing (PDA) processes such as Si wafer covering rapid thermal annealing (SWC-RTA) and rapid cooling process were investigated to improve electrical characteristics of HfOxNy films formed by ECR Ar/O2 plasma oxidation of ultra-thin HfN films. An EOT of 0.96 nm with leakage current density of 0.26 A/cm2 was obtained by utilizing SWC-RTA and rapid cooling. The obtained result shows the smallest equivalent oxide thickness (EOT) for the HfOxNy film formed by ECR plasma process so far.
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