{"title":"Development of an automatic CD control system for Cu damascene etching","authors":"H. Nambu, T. Akimoto","doi":"10.1109/ISSM.2007.4446832","DOIUrl":null,"url":null,"abstract":"A CD control technique for Cu damascene interconnection manufacturing was studied. To achieve target wire capacity and resistance, it is required that the CD of trench is always constant. In this issue, we developed newly CD control technique, and furthermore, the advanced CD control system was released for 90 nm LSI manufacturing, and it was achieved that efficient and accurate CD control on mass production of System LSI.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on Semiconductor Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2007.4446832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A CD control technique for Cu damascene interconnection manufacturing was studied. To achieve target wire capacity and resistance, it is required that the CD of trench is always constant. In this issue, we developed newly CD control technique, and furthermore, the advanced CD control system was released for 90 nm LSI manufacturing, and it was achieved that efficient and accurate CD control on mass production of System LSI.