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Design, Test, Integration, and Packaging of MEMS/MOEMS最新文献

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Numerical spring models for behavioral simulation of MEMS inertial sensors MEMS惯性传感器行为仿真的数值弹簧模型
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382307
Sitaraman V. Iyer, T. Mukherjee
{"title":"Numerical spring models for behavioral simulation of MEMS inertial sensors","authors":"Sitaraman V. Iyer, T. Mukherjee","doi":"10.1117/12.382307","DOIUrl":"https://doi.org/10.1117/12.382307","url":null,"abstract":"Design of springs is a very important step in the design process of inertial sensor. A procedure for computing the sprint stiffness for any single-chain configuration of beams and a translator which converts beam-based schematic representation of inertial sensor to higher-level behavioral representation are implemented. Combining the spring stiffness computation with the translator, sprint-mass behavioral models of inertial sensor are generated. The behavioral representation is used for rapid design-space exploration. Simulations of the higher-level behavioral representation is used for rapid design-space exploration. Simulations of the higher-level behavioral schematics are 10 to 100 times faster than simulation of the atomic-elements based schematics and the result match to within 5 percent.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115532495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system 采用开关电流接口系统的数字CMOS技术的单片集成磁传感器的建模、设计和测试
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382283
C. Rubio, S. Bota, J. G. Macías, J. Samitier
{"title":"Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system","authors":"C. Rubio, S. Bota, J. G. Macías, J. Samitier","doi":"10.1117/12.382283","DOIUrl":"https://doi.org/10.1117/12.382283","url":null,"abstract":"A magnetic field-to-voltage converter using a magnetic MOSFET devices has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8T, the obtained sensitivity was 0.03T-1 with an offset lower than 0.2 percent. SPICE macro model for the MAGFET in the saturation region is presented. Also, we have simulated the behavior of the specific A/D system, based on a current-mode technique, making use of high description language.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128557653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Silicon optoelectronic integrated circuits for MOEMS 用于MOEMS的硅光电集成电路
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382320
D. Cristea, F. Craciunoiu, M. Caldararu
{"title":"Silicon optoelectronic integrated circuits for MOEMS","authors":"D. Cristea, F. Craciunoiu, M. Caldararu","doi":"10.1117/12.382320","DOIUrl":"https://doi.org/10.1117/12.382320","url":null,"abstract":"We realized different types of optoelectronic integrated circuits by integrating on the same silicon chip: photo detectors, linear or logic electronic circuits, waveguides, coupling elements. This paper present the design, modeling and experimental realization of these components, underlining the original approaches and results. Special structures of photo detectors were designed, in order to allow optical coupling with waveguides and monolithic integration with electronic and photonic circuits. Original models for these photo detectors were developed. The electronic circuits we realized, unlike those reported in literature, can operate at very low input currents. Also new materials and processes were studied and experimented in order to improve the component performance. Specific technologies for optoelectronic circuits, compatible with either CMOS or bipolar processes, were established by analyzing the relationships between the technological parameters and circuit characteristics. Also the matching with waveguides and micro mechanical structures technologies was analyzed and experimented, as the aim of our research activity was to realize different types of micro-electro- mechanical systems for sensor applications.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126815125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Si-based microphone testing methodology and noise reduction 硅基传声器测试方法及降噪
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382304
C. Premachandran, Zhe Wang, T. Chai, S. C. Chong, M. Iyer
{"title":"Si-based microphone testing methodology and noise reduction","authors":"C. Premachandran, Zhe Wang, T. Chai, S. C. Chong, M. Iyer","doi":"10.1117/12.382304","DOIUrl":"https://doi.org/10.1117/12.382304","url":null,"abstract":"In this paper two different packaging and testing approaches were studied for Si based microphone. Microphone performance was tested with Ceramic, Plastic and metal packages. Sensitivity testing of microphone is done when it is connected to an ASIC die. Testing was done with microphone and ASIC packaged separately and also in a single package. Substantial noise was generated when microphone and ASIC are tested separately in a PCB. Noise was detected after 150 Hz with the noise intensity reducing as it goes to higher frequencies. This was observed regardless of the packaging schemes. Different shielding methods were tried and found that copper foil shielding results in substantial noise reduction during frequency response testing and a flat response curve was observed with metal can package. Form this new testing methodology, it is demonstrated that same ASIC can be used repeatedly during microphone testing and hence some cost reduction can be expected.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134211201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Silicon micro-electro-mechanical systems for millimeter-wave applications 毫米波应用的硅微机电系统
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382269
K. Grenier, P. Pons, T. Parra, R. Plana, J. Graffeuil
{"title":"Silicon micro-electro-mechanical systems for millimeter-wave applications","authors":"K. Grenier, P. Pons, T. Parra, R. Plana, J. Graffeuil","doi":"10.1117/12.382269","DOIUrl":"https://doi.org/10.1117/12.382269","url":null,"abstract":"A new fully silicon MEM technology and design methodology is introduced to realize millimeter-wave applications such as switches. It is based on two kinds of micro-machining techniques: a bulk micro-machines used to realize micro-wave circuits on a suspended membrane in order to decrease losses, and a surface micro-machining to make air-bridges actuable by electrostatic force. A MEM bridge electrical model has been investigated and implemented in the design of distributed switches.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131661427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preliminary results at the ultradeep x-ray lithography beamline at CAMD CAMD超深x射线光刻光束线的初步结果
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382294
G. Aigeldinger, P. Coane, B. Craft, J. Goettert, S. Ledger, Z. Ling, H. Manohara, Louis Rupp
{"title":"Preliminary results at the ultradeep x-ray lithography beamline at CAMD","authors":"G. Aigeldinger, P. Coane, B. Craft, J. Goettert, S. Ledger, Z. Ling, H. Manohara, Louis Rupp","doi":"10.1117/12.382294","DOIUrl":"https://doi.org/10.1117/12.382294","url":null,"abstract":"The Center for Advanced Micro structures and Devices (CAMD) at Louisiana State University supports one of the strongest programs in synchrotron radiation micro fabrication in the USA and, in particular, in deep x-ray lithography. Synchrotron radiation emitted form CAMD's bending magnets has photon energies in the range extending from the IR to approximately 20 keV. CAMD operates at 1.3 and 1.5 GeV, providing characteristic energies of 1.66 and 2.55 keV, respectively. CAMD bending magnets provide a relatively soft x-ray spectrum that limits the maximal structure height achievable within a reasonable exposure time to approximately 500 micrometers . In order to extend the x-ray spectrum to higher photon energies, a 5 pole 7T superconducting wiggler was inserted in one of the straight sections. A beam line and exposure station designed for ultra deep x-ray lithography was constructed and connected to the wiggler. First exposures into 1 mm and 2 mm thick PMMA resist using a graphite mask with 40 micrometers thick gold absorber has been completed.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123477568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
MEMS structure: micromirror array MEMS结构:微镜阵列
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382325
M. Huja, M. Husák
{"title":"MEMS structure: micromirror array","authors":"M. Huja, M. Husák","doi":"10.1117/12.382325","DOIUrl":"https://doi.org/10.1117/12.382325","url":null,"abstract":"The core of the project has been to design a moveable micro mirror array with the most optimal dependence of the optically active area, the deflection angles and the micro mirror power consumption, while keeping the cost of the chip as low as possible. The matrix of 20 X 20 micromirrors uses an electrostatically actuated principle. The array is designed using the Three Layer Polysilicon Surface Micro machining Process technology. Each micro mirror has two torsion springs and the size of the reflected plate is 70 X 70 micrometers . The penetration of the reflected micro mirror array is about 70 percent. The micro mirror array is addressed by 36 pads that are connected to the top and bottom electrodes. Potential connected between electrodes is used for the actuation of micro mirror. For the first step, we have designed 20 types of micromirrors, which differ in geometrical sizes and thickness of the micro mirror plates. The dilation angle of the micro mirror is 1.7 or 2.3 degrees defending on the type of the micro mirror.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"4019 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130064493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dynamic checking improves MEMS design methodology 动态检测改进了MEMS设计方法
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382310
Xavier Marin, J. Carrabina, J. Bausells
{"title":"Dynamic checking improves MEMS design methodology","authors":"Xavier Marin, J. Carrabina, J. Bausells","doi":"10.1117/12.382310","DOIUrl":"https://doi.org/10.1117/12.382310","url":null,"abstract":"Design verification methodologies and tool such as DRC and ERC used on MEMS design have been inherited from the transistor based analog and digital full custom design flows. However the devices are defined on a 2D layout, they have a 3D structure. Thus, current tools do not have into account the new features that appear in MEMS design, especially those related with device micro machining. The main consequence on it is that it is necessary to include information of the vertical parameters on the DRC, what is not at all usual in classical design. We claim that the inclusion of such information together with the consequent improvement of tools for DRC, ERC and device parameter extraction, can reduce design and simulation efforts as well as improve the manufacturing yield.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128895158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Residual thermomechanical stresses in ultrathin chip stack technology 超薄芯片堆技术中的残余热机械应力
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382329
J. Puigcorbé, S. Leseduarte, S. Marco, E. Beyne, R. Van Hoof, A. Marty, S. Pinel, O. Vendier, A. Coello-Vera
{"title":"Residual thermomechanical stresses in ultrathin chip stack technology","authors":"J. Puigcorbé, S. Leseduarte, S. Marco, E. Beyne, R. Van Hoof, A. Marty, S. Pinel, O. Vendier, A. Coello-Vera","doi":"10.1117/12.382329","DOIUrl":"https://doi.org/10.1117/12.382329","url":null,"abstract":"The aim of this work is to analyze the thermo-mechanical stresses evolution produced during the fabrication sequence of the multi-level UTCS structure. Several non-linear material models have been taken into account during the process of modeling. We have therefore resorted to the Finite Element Method for the evaluation of such thermo- mechanical stresses that appears in the manufacturing and stacking process. These efforts are made to optimize the product and process design.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115263068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SCREAM micromachined high-aspect-ratio low-g microaccelerometer 尖叫微机械高纵横比低g微加速度计
Design, Test, Integration, and Packaging of MEMS/MOEMS Pub Date : 2000-04-10 DOI: 10.1117/12.382268
F. Tay, V. Logeeswaran, Yung C. Liang
{"title":"SCREAM micromachined high-aspect-ratio low-g microaccelerometer","authors":"F. Tay, V. Logeeswaran, Yung C. Liang","doi":"10.1117/12.382268","DOIUrl":"https://doi.org/10.1117/12.382268","url":null,"abstract":"A low-cost open loop differential capacitive accelerometer with a resolution of 5mg and high sensitivity has been designed with a ful measurement range of +/- 2g. By using the single crystal reactive ion etching and metallization process, beams with high aspect ratio, small air gap for large capacitance variation and low parasitic capacitance have been attained. The fabricated micro accelerometer also offers high voltage output and it has successfully survived a shock of 1000g. The effects of electrostatic spring constant on the natural frequency and sensitivity of the accelerometer have been thoroughly discussed, and obliqueness of the beam cross-section has also been taken into consideration. The radiometric error for this system has been optimized and is well below 2 percent with a cross axis sensitivity of less than 3 percent. The operating voltage is 5V DC. The construction is based on a hybrid two- chip design and the sensing element is wire bonded to a CMOS ASIC.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134604444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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