{"title":"采用开关电流接口系统的数字CMOS技术的单片集成磁传感器的建模、设计和测试","authors":"C. Rubio, S. Bota, J. G. Macías, J. Samitier","doi":"10.1117/12.382283","DOIUrl":null,"url":null,"abstract":"A magnetic field-to-voltage converter using a magnetic MOSFET devices has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8T, the obtained sensitivity was 0.03T-1 with an offset lower than 0.2 percent. SPICE macro model for the MAGFET in the saturation region is presented. Also, we have simulated the behavior of the specific A/D system, based on a current-mode technique, making use of high description language.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system\",\"authors\":\"C. Rubio, S. Bota, J. G. Macías, J. Samitier\",\"doi\":\"10.1117/12.382283\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A magnetic field-to-voltage converter using a magnetic MOSFET devices has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8T, the obtained sensitivity was 0.03T-1 with an offset lower than 0.2 percent. SPICE macro model for the MAGFET in the saturation region is presented. Also, we have simulated the behavior of the specific A/D system, based on a current-mode technique, making use of high description language.\",\"PeriodicalId\":318748,\"journal\":{\"name\":\"Design, Test, Integration, and Packaging of MEMS/MOEMS\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Design, Test, Integration, and Packaging of MEMS/MOEMS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.382283\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Design, Test, Integration, and Packaging of MEMS/MOEMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.382283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system
A magnetic field-to-voltage converter using a magnetic MOSFET devices has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8T, the obtained sensitivity was 0.03T-1 with an offset lower than 0.2 percent. SPICE macro model for the MAGFET in the saturation region is presented. Also, we have simulated the behavior of the specific A/D system, based on a current-mode technique, making use of high description language.
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