Preliminary results at the ultradeep x-ray lithography beamline at CAMD

G. Aigeldinger, P. Coane, B. Craft, J. Goettert, S. Ledger, Z. Ling, H. Manohara, Louis Rupp
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引用次数: 3

Abstract

The Center for Advanced Micro structures and Devices (CAMD) at Louisiana State University supports one of the strongest programs in synchrotron radiation micro fabrication in the USA and, in particular, in deep x-ray lithography. Synchrotron radiation emitted form CAMD's bending magnets has photon energies in the range extending from the IR to approximately 20 keV. CAMD operates at 1.3 and 1.5 GeV, providing characteristic energies of 1.66 and 2.55 keV, respectively. CAMD bending magnets provide a relatively soft x-ray spectrum that limits the maximal structure height achievable within a reasonable exposure time to approximately 500 micrometers . In order to extend the x-ray spectrum to higher photon energies, a 5 pole 7T superconducting wiggler was inserted in one of the straight sections. A beam line and exposure station designed for ultra deep x-ray lithography was constructed and connected to the wiggler. First exposures into 1 mm and 2 mm thick PMMA resist using a graphite mask with 40 micrometers thick gold absorber has been completed.
CAMD超深x射线光刻光束线的初步结果
路易斯安那州立大学的先进微结构和器件中心(CAMD)支持美国同步辐射微制造领域最强大的项目之一,特别是在深x射线光刻领域。CAMD弯曲磁体发射的同步辐射具有从IR到大约20 keV的光子能量范围。CAMD工作在1.3和1.5 GeV,分别提供1.66和2.55 keV的特征能量。CAMD弯曲磁体提供相对较软的x射线光谱,限制了在合理曝光时间内可实现的最大结构高度约为500微米。为了将x射线光谱扩展到更高的光子能量,在其中一个直线段插入了一个5极7T超导摆动器。设计了用于超深x射线光刻的光束线和曝光站,并连接到摆动器上。首次曝光到1毫米和2毫米厚的PMMA抗蚀剂使用石墨掩膜与40微米厚的金吸收剂已经完成。
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