Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system

Abstract

A magnetic field-to-voltage converter using a magnetic MOSFET devices has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8T, the obtained sensitivity was 0.03T-1 with an offset lower than 0.2 percent. SPICE macro model for the MAGFET in the saturation region is presented. Also, we have simulated the behavior of the specific A/D system, based on a current-mode technique, making use of high description language.